STD15N60M2 - 600V 15A N-Channel Power MOSFET | STMicroelectronics
N.º da peça: STD15N60M2 ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.1524 | $1,15 |
STD15N60M2 Visão geral
A power MOSFET is a type of field-effect transistor designed to handle significant power levels in switching and amplification circuits. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and high efficiency. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs.
Key features of the STD15N60M2 include a very low gate charge (Qg) of 28 nC, which reduces switching losses and enables high-frequency operation. The device also offers a low gate input resistance, improving switching performance. Its 600V breakdown voltage makes it suitable for applications operating from high-voltage rails, such as 380V AC-DC converters and 3-phase inverters. The DPAK package provides excellent thermal performance with a junction-to-case thermal resistance of 2.5°C/W, allowing efficient heat dissipation.
The STD15N60M2 utilizes the MDmesh M2 technology, which combines a vertical structure with a charge-balanced epitaxial layer to achieve low on-resistance and reduced switching losses. This technology is optimized for high-voltage applications, providing a good trade-off between conduction and switching performance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control systems. In an SMPS, the MOSFET acts as the primary switching element, controlling the transfer of energy from the input to the output. Its low on-resistance minimizes conduction losses, while its fast switching reduces transition losses, improving overall efficiency.
When designing with the STD15N60M2, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. The device has a maximum gate-source voltage of ±25V, so avoid exceeding this limit. Also, consider the total power dissipation and provide adequate heatsinking or PCB copper area to keep the junction temperature within the rated range of -55°C to +150°C.
Alternativas drop-in para STD15N60M2 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IPD15N60S3
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
FDP15N60
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
AOT15N60
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
STD15N60M2 Classificações máximas e características elétricas
| Technology | MDmesh M2 |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 15 A |
| Continuous Drain Current (ID) at 100°C | 9.5 A |
| Pulsed Drain Current (IDM) | 60 A |
| Gate-Source Voltage (VGS) | ±25 V |
| On-Resistance (RDS(on)) typical | 0.29 ohm |
| On-Resistance (RDS(on)) max | 0.34 ohm |
| Total Gate Charge (Qg) | 28 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 80 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Power Dissipation (PD) at 25°C | 110 W |
| Faixa de temperatura de operação | -55°C to +150°C |
| Encapsulamento | DPAK (TO-252) |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| Livre de halogênio | Yes |
Configuração de pinos do STD15N60M2
| Pino 1 | Gate — Gate drive input |
| Pino 2 | Drain — Drain connection (tab) |
| Pino 3 | Source — Source connection |
Área de Operação Segura
Aplicações típicas
STD15N60M2 é adequado para 6 aplicaçãos: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Motor Control, Solar Inverters, Uninterruptible Power Supplies (UPS).
Switch-Mode Power Supplies (SMPS)
The STD15N60M2 is ideal for SMPS due to its 600V breakdown voltage and low on-resistance. In a typical flyback or forward converter, the MOSFET switches at high frequency, and its low gate charge (28 nC) reduces switching losses. The low RDS(on) of 0.29 ohm minimizes conduction losses, improving overall efficiency. The DPAK package allows compact designs with adequate thermal management. For a 100W SMPS operating from 380V DC, the MOSFET can handle the voltage stress and current with proper heatsinking. The fast switching speed enables higher frequency operation, reducing transformer size. Designers should ensure proper gate drive voltage (10V) and snubber circuits to manage voltage spikes.
Recomendado
Power Factor Correction (PFC)
In PFC circuits, the STD15N60M2 operates as a boost switch to shape the input current waveform. Its 600V rating is sufficient for universal input (85-265V AC) applications. The low on-resistance reduces conduction losses, and the low gate charge enables high-frequency operation (up to 100 kHz) to reduce inductor size. The device's fast switching minimizes EMI, simplifying filter design. For a 300W PFC stage, the MOSFET dissipates approximately 5W, requiring a heatsink or adequate PCB copper. The MDmesh M2 technology provides a good trade-off between RDS(on) and Qg, making it suitable for continuous conduction mode (CCM) PFC. Designers should use a dedicated PFC controller like the L6562A and ensure proper gate drive.
Recomendado
LED Lighting Drivers
The STD15N60M2 is used in LED drivers for high-voltage applications, such as street lighting and industrial lighting. In a flyback LED driver, the MOSFET switches the primary side of the transformer, and its 600V rating handles the reflected voltage. The low on-resistance reduces losses, improving efficiency and reducing heat. The DPAK package is suitable for compact LED driver designs. For a 50W LED driver, the MOSFET operates at 65 kHz, and its low gate charge allows efficient switching. The device's robustness against avalanche ensures reliability in inductive load conditions. Designers should use a suitable LED driver IC like the HV9910 and ensure proper thermal management.
Recomendado
Motor Control
In motor control applications, the STD15N60M2 is used in the inverter stage of variable frequency drives (VFDs) for three-phase motors. Its 600V rating is suitable for 230V AC motor drives. The low on-resistance minimizes conduction losses, and the fast switching reduces switching losses, improving efficiency. The device can handle the inductive load currents with proper freewheeling diodes. For a 1kW motor drive, the MOSFETs are used in a three-phase bridge, and each device dissipates about 10W, requiring heatsinks. The MDmesh M2 technology provides ruggedness for harsh industrial environments. Designers should use gate drivers like the IR2110 and ensure proper dead-time control.
Recomendado
Solar Inverters
The STD15N60M2 is used in solar inverters for DC-AC conversion. Its 600V rating is suitable for photovoltaic systems with up to 400V DC input. The low on-resistance reduces conduction losses, improving the overall efficiency of the inverter. The device's fast switching enables high-frequency PWM, reducing the size of magnetic components. For a 2kW solar inverter, the MOSFETs are used in a full-bridge topology, and each device dissipates about 15W, requiring adequate cooling. The MDmesh M2 technology ensures high reliability in outdoor environments. Designers should use a suitable inverter controller and ensure proper gate drive and protection circuits.
Recomendado
Uninterruptible Power Supplies (UPS)
In UPS systems, the STD15N60M2 is used in the inverter and battery charger stages. Its 600V rating is suitable for 230V AC output. The low on-resistance reduces losses, improving efficiency and battery life. The device's fast switching enables high-frequency operation, reducing transformer size. For a 1kVA UPS, the MOSFETs are used in a half-bridge inverter, and each device dissipates about 12W, requiring heatsinks. The MDmesh M2 technology provides robustness for continuous operation. Designers should use a UPS controller and ensure proper thermal management.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para STD15N60M2 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | STD15N60M2-1 | STF15N60M2 | IPD15N60S3 | FDP15N60 |
|---|---|---|---|---|---|
| Package | DPAK (TO-252) | IPAK (TO-251) | TO-220FP | DPAK (TO-252) | DPAK (TO-252) |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 15 A | 15 A | 15 A | 15 A | 15 A |
| On-Resistance (RDS(on)) typical | 0.29 ohm | 0.29 ohm | 0.29 ohm | 0.29 ohm | 0.32 ohm |
| Total Gate Charge (Qg) | 28 nC | 28 nC | 28 nC | 30 nC | 35 nC |
| Power Dissipation (PD) at 25°C | 110 W | 110 W | 40 W | 110 W | 110 W |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Principais diferenciais
- Low on-resistance (0.29 ohm) reduces conduction losses (vs FDP15N60)
- Low gate charge (28 nC) enables high-frequency operation (vs IPD15N60S3)
- MDmesh M2 technology provides a good trade-off between RDS(on) and Qg (vs FDP15N60)
Notas de projeto
The STD15N60M2 has a maximum power dissipation of 110W at 25°C case temperature. In a typical SMPS application with 100W output, the MOSFET may dissipate 5-10W. Ensure adequate heatsinking or PCB copper area to keep the junction temperature below 150°C. The junction-to-case thermal resistance is 2.5°C/W, so a heatsink with a thermal resistance of 10°C/W or better is recommended for continuous operation.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-22 ohm) to control switching speed and reduce EMI. The source pin should be connected directly to the ground plane with a short, wide trace to minimize common-source inductance. For the drain, use a wide copper pour to aid heat dissipation.
Do not exceed the maximum gate-source voltage of ±25V. Use a gate driver with proper voltage clamping if necessary. Ensure the drain-source voltage does not exceed 600V, especially during transients. Add a snubber circuit or use avalanche-rated devices to handle inductive spikes. Also, consider the reverse recovery of the body diode in bridge topologies.
Informações de conformidade
RoHS compliant and halogen-free per STMicroelectronics product page. Not AEC-Q100 qualified; for automotive, consider AEC-Q101 parts.
