STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics
N.º da peça: STF13N95K3 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.28 | $228,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.85 | $1.850,00 |
STF13N95K3 Visão geral
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are the backbone of modern power management systems, including switch-mode power supplies (SMPS), motor drives, and inverters, due to their fast switching speeds, high input impedance, and low on-state resistance. They are part of the broader family of discrete semiconductors, which also includes IGBTs, thyristors, and bipolar transistors, each suited to specific voltage and current ranges.
Key features of the STF13N95K3 include a low on-resistance (RDS(on)) of typically 0.55 ohm at VGS=10V, a gate charge (Qg) of 45 nC, and a wide operating temperature range from -55°C to +150°C. The device is RoHS compliant and halogen-free, meeting modern environmental standards. Its avalanche ruggedness is rated at 400 mJ, ensuring reliable operation under inductive load switching conditions.
Technically, the STF13N95K3 is built using STMicroelectronics' MDmesh K3 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and high breakdown voltage simultaneously. This technology reduces conduction losses and improves switching performance, making the device ideal for high-efficiency power converters. The TO-220FP package offers a thermal resistance of 3.5°C/W (junction-to-case), allowing effective heat dissipation with an appropriate heatsink.
Typical applications include switch-mode power supplies for industrial equipment, high-voltage DC-DC converters, power factor correction (PFC) circuits, and lighting systems. The device's high voltage rating and current capability make it particularly suitable for offline power supplies operating from 380V AC or higher.
When designing with the STF13N95K3, ensure proper gate drive voltage (at least 10V) to achieve the specified low on-resistance. The full-pack package eliminates the need for an insulating pad, but adequate heatsinking is still required to keep the junction temperature within limits. Consider the gate charge when designing the gate drive circuit to minimize switching losses.
Alternativas drop-in para STF13N95K3 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com STF13N95K3 (mesmo formato e footprint) — diferindo em Mounting Type, Operating Temperature Range, Package.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
STF13N95K3-1
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
STF13N95K3 Classificações máximas e características elétricas
| Polarity | N-Channel |
| Drain-Source Breakdown Voltage (BVdss) | 950 V |
| Continuous Drain Current (ID) at 25°C | 13 A |
| Continuous Drain Current (ID) at 100°C | 8.2 A |
| Pulsed Drain Current (IDM) | 39 A |
| On-Resistance (RDS(on)) at VGS=10V | 0.55 ohm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V to 5 V |
| Gate Charge (Qg) | 45 nC |
| Input Capacitance (Ciss) | 1900 pF |
| Output Capacitance (Coss) | 120 pF |
| Reverse Transfer Capacitance (Crss) | 10 pF |
| Avalanche Energy (EAS) | 400 mJ |
| Faixa de temperatura de operação | -55°C to +150°C |
| Encapsulamento | TO-220FP |
| Tipo de montagem | Through Hole |
| Status RoHS | Compliant |
| Livre de halogênio | Yes |
Configuração de pinos do STF13N95K3
| Pino 1 | Gate — Gate terminal for controlling the MOSFET |
| Pino 2 | Drain — Drain terminal, connected to the load |
| Pino 3 | Source — Source terminal, connected to ground |
Área de Operação Segura (DC)
Aplicações típicas
STF13N95K3 é adequado para 6 aplicaçãos: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Circuits, High-Voltage DC-DC Converters, Lighting Systems (HID, LED Drivers), Industrial Motor Drives, Uninterruptible Power Supplies (UPS).
Switch-Mode Power Supplies (SMPS)
The STF13N95K3 is ideal for SMPS due to its high voltage rating (950V) and low on-resistance (0.55 ohm). In a typical flyback converter, the MOSFET switches at high frequency, and its low RDS(on) minimizes conduction losses, improving overall efficiency. The TO-220FP package provides isolation, simplifying heatsinking. The device's avalanche ruggedness (400 mJ) ensures reliable operation during load transients. Compared to lower-voltage MOSFETs, the 950V rating allows operation directly from 380V AC mains without additional derating, reducing component count and cost.
Recomendado
Power Factor Correction (PFC) Circuits
In PFC circuits, the STF13N95K3 operates as a boost switch, shaping the input current to be sinusoidal and in phase with the voltage. Its high breakdown voltage (950V) provides ample margin for the boosted output voltage (typically 400V). The low gate charge (45 nC) enables fast switching, reducing switching losses. The device's thermal resistance (3.5°C/W) allows efficient heat dissipation with a suitable heatsink. The TO-220FP package's isolation simplifies mounting, and the wide operating temperature range (-55°C to +150°C) ensures reliability in industrial environments.
Recomendado
High-Voltage DC-DC Converters
The STF13N95K3 is suitable for high-voltage DC-DC converters, such as those used in solar inverters or electric vehicle chargers. Its 950V rating allows it to handle high input voltages, while the 13A current capability supports substantial power levels. The low on-resistance reduces conduction losses, and the fast switching speed (due to low gate charge) minimizes switching losses. The device's avalanche energy rating (400 mJ) ensures robustness against inductive spikes. The TO-220FP package provides thermal isolation, and the device's wide temperature range makes it suitable for outdoor installations.
Recomendado
Lighting Systems (HID, LED Drivers)
In high-intensity discharge (HID) lamp ballasts and LED drivers, the STF13N95K3 is used in the power stage to control current and voltage. Its high voltage rating (950V) is essential for handling the high voltages present in HID ballasts. The low on-resistance ensures efficient power delivery, and the fast switching reduces electromagnetic interference. The TO-220FP package's isolation simplifies design, and the device's ruggedness ensures long-term reliability. The wide operating temperature range allows use in outdoor lighting fixtures.
Recomendado
Industrial Motor Drives
The STF13N95K3 can be used in motor drives for industrial machinery, where high voltage and current are required. Its 950V rating allows operation from 3-phase 380V AC supplies, and the 13A current capability supports motors up to several kilowatts. The low on-resistance reduces losses, and the avalanche ruggedness ensures reliability during motor start/stop transients. The TO-220FP package provides isolation, and the device's wide temperature range suits harsh industrial environments. However, for very high power motors, a TO-247 package might be preferred for better thermal performance.
Recomendado
Uninterruptible Power Supplies (UPS)
In UPS systems, the STF13N95K3 is used in the inverter stage to convert DC to AC. Its high voltage rating (950V) allows it to handle the DC bus voltage (typically 400V), and the 13A current capability supports the output power. The low on-resistance minimizes losses, improving efficiency and battery life. The device's fast switching reduces harmonic distortion, and its ruggedness ensures reliable operation during load changes. The TO-220FP package simplifies heatsinking, and the wide temperature range allows operation in various environments.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para STF13N95K3 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | STF13N95K3-1 | STP13N95K3 | STW13N95K3 | FCP13N60N | IPP60R099CP |
|---|---|---|---|---|---|---|
| Package | TO-220FP | TO-220FP | TO-220 | TO-247 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | onsemi | Infineon |
| Drain-Source Breakdown Voltage | 950 V | 950 V | 950 V | 950 V | 600 V | 600 V |
| Continuous Drain Current (25°C) | 13 A | 13 A | 13 A | 13 A | 13 A | 11 A |
| On-Resistance (RDS(on)) | 0.55 ohm | 0.55 ohm | 0.55 ohm | 0.55 ohm | 0.29 ohm | 0.099 ohm |
| Gate Charge (Qg) | 45 nC | 45 nC | 45 nC | 45 nC | 38 nC | 38 nC |
| Avalanche Energy (EAS) | 400 mJ | 400 mJ | 400 mJ | 400 mJ | 200 mJ | 150 mJ |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C | -55°C to +150°C |
Principais diferenciais
- High breakdown voltage of 950V (vs FCP13N60N)
- Isolated TO-220FP package (vs STP13N95K3)
- Higher avalanche energy rating (vs IPP60R099CP)
Notas de projeto
The STF13N95K3 has a junction-to-case thermal resistance of 3.5°C/W. At maximum current (13A) and typical on-resistance (0.55 ohm), power dissipation is approximately 93W. This would cause a junction temperature rise of 325°C above case temperature, which is unacceptable. Therefore, a heatsink with low thermal resistance is mandatory. For example, to keep junction temperature below 125°C at 25°C ambient, the total thermal resistance (junction-to-ambient) must be less than (125-25)/93 = 1.08°C/W, requiring a heatsink with thermal resistance below 1°C/W. Consider using forced air cooling or a larger heatsink for high-power applications.
For the TO-220FP package, ensure proper mounting with a heatsink. The full-pack package has an isolated tab, so no insulating pad is needed, but thermal compound should be applied between the device and heatsink to improve heat transfer. Use a torque screwdriver to tighten the mounting screw to the recommended torque (typically 0.55 Nm) to avoid damaging the package. Ensure the PCB has adequate copper area for the gate and source connections to minimize parasitic inductance.
One common pitfall is operating the MOSFET without a proper gate driver. The gate-source threshold voltage is between 3V and 5V, but to achieve the specified low on-resistance, a gate drive voltage of at least 10V is required. Additionally, the gate charge (45 nC) must be supplied quickly to reduce switching losses. Use a gate driver IC with sufficient peak current capability. Also, ensure the gate-source voltage does not exceed the maximum rating (typically ±30V) to avoid gate oxide breakdown.
Informações de conformidade
RoHS compliant and halogen-free per STMicroelectronics. AEC-Q100 is not applicable for discrete MOSFETs; automotive qualification (AEC-Q101) not confirmed.