UM4306B - Si PPIN Hermetic Glass Axial RF Diode | Microchip
N.º da peça: UM4306B ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $14.5 | $14,50 |
| 10 | $13.05 | $130,50 |
| 100 | $11.6 | $1.160,00 |
| 500 | $10.45 | $5.225,00 |
| 1.000 | $9.3 | $9.300,00 |
UM4306B Visão geral
A PIN diode is a specialized diode structure in which a high-resistivity intrinsic semiconductor region (the "I-layer") is sandwiched between the P and N regions. Under forward bias, charge carriers flood the I-layer, lowering its RF resistance; under reverse or zero bias, the diode presents a near-open circuit. This behavior makes PIN diodes ideal for controlling RF signals in switch, attenuator, limiter, and phase-shifter circuits across a wide frequency range, behaving as a current-controlled variable resistor at RF.
Key features of the UM4306B include very low intermodulation distortion, a thick intrinsic region for high RF voltage handling, hermetic glass axial packaging for environmental robustness, and a low thermal resistance construction that supports high average power dissipation. These attributes allow the UM4306B to be deployed where harmonic and intermodulation performance are critical, particularly in multi-carrier or broadband RF signal chains.
Technically, the part belongs to the UM4300/UM7300 PIN diode family. The thick I-layer gives the diode a high breakdown voltage and high carrier lifetime, enabling it to handle significant RF power while maintaining a low distortion floor. The hermetic glass axial (axial-lead) package protects the silicon die from moisture and contamination, supporting long-term reliability in outdoor, military, and aerospace-grade RF front ends.
Typical applications include RF switching matrices, PIN diode attenuators, AGC loops, TR switches in radar and radio transceivers, RF test equipment, and broadband signal-routing networks. Designers favor the UM4306B in designs that demand both low distortion and high reliability.
When designing with this device, observe the recommended bias currents from the manufacturer datasheet and verify that the package's thermal path (lead soldering) can dissipate the intended RF power. Designers should match the bias network to the carrier-frequency band of operation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an information gain over distributor-only listings for engineers evaluating the UM4306B.
Alternativas drop-in para UM4306B — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com UM4306B (mesmo formato e footprint).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
UM4306
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
UM7300
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
UM4300
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
UM4306B Classificações máximas e características elétricas
| Product Type | PIN Diode |
| Encapsulamento | Hermetic Glass Axial |
| Technology | Silicon PIN (Si PPIN) |
| Configuration | Single Diode |
| Application Category | RF Switching / Attenuator |
| Manufacturer Family | UM4300 / UM7300 Series |
| Tipo de montagem | Through-Hole (Axial Leads) |
Configuração de pinos do UM4306B
| Pino 1 | Anode — Anode lead (axial lead, identified by absence of band marking) |
| Pino 2 | Cathode — Cathode lead (axial lead, identified by polarity band on glass body) |
Aplicações típicas
UM4306B é adequado para 6 aplicaçãos: PIN Diode RF Switch, Linear RF Attenuator, TR Switch for Radar Transceivers, Automatic Gain Control (AGC) Loop, Broadband Signal Routing, RF Test and Measurement Equipment.
PIN Diode RF Switch
The UM4306B's thick intrinsic region and hermetic glass axial package suit it to RF switching matrices where low insertion loss and high isolation are required. Designers use the diode as a current-controlled RF switch, biased through a bias network to transition between high and low RF resistance states. The hermetic package supports reliable switching in radar and radio transceiver front ends where environmental robustness matters. Compared with SMD PIN diodes, the UM4306B offers higher RF power handling per package.
Recomendado
Linear RF Attenuator
The UM4306B is well matched to linear attenuator circuits where the diode's RF resistance is varied continuously via DC bias current. The thick intrinsic region produces very low intermodulation distortion, which is critical in attenuators placed in front of sensitive receivers. The hermetic glass axial package supports consistent thermal behavior across long RF paths. The part's datasheet family (UM4300/UM7300) is explicitly described as 'uniquely applicable to very low distortion linear attenuators.'
Recomendado
TR Switch for Radar Transceivers
In transmit/receive (TR) switches the UM4306B acts as a quarter-wave or shunt-mounted switch to protect the receiver during high-power transmit pulses. The diode's thick intrinsic region withstands the high reverse RF voltage present during transmit, while the hermetic glass package handles the elevated thermal load. The through-hole axial leads simplify integration with stripline or coax RF assemblies commonly used in radar modules.
Recomendado
Automatic Gain Control (AGC) Loop
AGC loops benefit from the UM4306B's continuous resistance-versus-bias behavior, allowing smooth gain adjustment across the RF signal path. Designers place the diode in a Pi or T attenuator network, modulating bias current to control RF attenuation dynamically. Low intermodulation distortion preserves signal fidelity in AGC-controlled receivers used in spectrum monitoring and software-defined radio platforms.
Recomendado
Broadband Signal Routing
Broadband RF routers and signal-routing matrices use the UM4306B as a switching element because its low capacitance under zero bias and low resistance under forward bias allow operation over wide frequency ranges. The hermetic glass package supports long-term performance in outdoor or industrial RF installations where temperature cycling and humidity would degrade plastic-packaged alternatives.
Recomendado
RF Test and Measurement Equipment
RF test instruments, including signal generators, spectrum analyzers, and power meters, integrate the UM4306B in step attenuators and signal-path switching networks. The diode's low distortion characteristics preserve measurement accuracy, while the hermetic glass axial package supports repeatable calibration behavior across the instrument's lifetime. Engineers favor through-hole PIN diodes in test equipment where serviceability and PCB rework are considerations.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para UM4306B — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | UM4306 | UM7300 | UM4300 |
|---|---|---|---|---|
| Package | Hermetic Glass Axial | Hermetic Glass Axial - same | Hermetic Glass Axial - same | Hermetic Glass Axial - same |
| Brand | Microchip Technology | Microchip Technology - same | Microchip Technology - same | Microchip Technology - same |
| Technology | Silicon PIN (Si PPIN) | Silicon PIN - same | Silicon PIN - same | Silicon PIN - same |
| Datasheet Family | UM4300/UM7300 | UM4300/UM7300 - same | UM4300/UM7300 - same | UM4300/UM7300 - same |
| Mounting Type | Through-Hole Axial | Through-Hole Axial - same | Through-Hole Axial - same | Through-Hole Axial - same |
| Application Category | RF Switching / Attenuator | RF Switching / Attenuator - same | RF Switching / Attenuator - same | RF Switching / Attenuator - same |
| Distributor Stock (as of 2026-10-14) | 14,283+ pieces (QTreeic) | Available via UM4300/UM7300 distributors | Available via UM4300/UM7300 distributors | Available via UM4300/UM7300 distributors |
Principais diferenciais
- Hermetic glass axial package for environmental robustness (vs Generic SMD PIN diodes)
- Very low intermodulation distortion for linear attenuators (vs Standard-thickness-I-layer PIN diodes)
- Through-hole axial lead mounting for serviceability (vs SMD PIN diodes)
Notas de projeto
The UM4306B uses a hermetic glass axial package that dissipates heat through its axial leads into the PCB land pads. Designers should provide sufficient copper pad area on both anode and cathode pads to conduct heat away from the diode body. For continuous RF power applications, thermal analysis is recommended because glass-package diodes have a higher junction-to-ambient thermal resistance than equivalent SMD PIN packages.
Do not operate the UM4306B above its breakdown voltage or beyond its maximum RF power rating. Verify bias network design: too low a forward bias current may keep the diode in a high-resistance state, causing excessive insertion loss in switch applications. Consult the manufacturer datasheet for the recommended IF bias range and the corresponding RF resistance curve. The band-marking on the glass body identifies the cathode; reversing polarity will not damage the part but may produce unexpected circuit behavior if it is part of a DC-biased network.
For RF switch and attenuator designs, place the UM4306B in series or shunt configuration as close as possible to the 50 ohm RF trace to minimize parasitic inductance from the axial leads. Use a small PCB footprint pad width consistent with the lead diameter; oversized pads can introduce additional lead-length inductance that degrades high-frequency performance. Apply a small ferrite bead or RF choke on the bias line to prevent RF leakage into the DC control path.
The UM4306B's thick intrinsic region gives it low intermodulation distortion at the expense of slower switching speed compared with thinner-I-layer PIN diodes. In time-critical switching applications, evaluate switching speed against the chosen bias network; a higher forward bias current reduces switching time but increases DC power consumption. For attenuator applications, the UM4306B's smooth resistance-vs-bias curve supports low-distortion gain control.
Informações de conformidade
Compliance information for the UM4306B was not present in the Verified Web Data. Engineers should consult the manufacturer datasheet or contact Microchip directly for RoHS, REACH, lead-free, halogen-free, and conflict minerals certifications.
