2EDL8124GXUMA1 vs 1ED3124MC12HXUMA1 Сравнение
Подробное сравнение бок о бок 2EDL8124GXUMA1 от Infineon и 1ED3124MC12HXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
2EDL8124GXUMA1 - 120V Boot 4A Junction-isolated Gate Driver | Infineon
2EDL8124GXUMA1 ✓ Активен
Сравнение характеристик
| Параметр | 2EDL8124GXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,98 | $1,45 |
| Driver Configuration | Half-bridge (high-side + low-side) | — |
| Input Type | Non-inverting, TTL-compatible with hysteresis | — |
| Number of Drivers | 2 | 1 |
| Peak Source Current | 3 A | 13.5 A |
| Peak Sink Current | 4 A | 14 A |
| Bootstrap Supply (VBS) Maximum | 120 V | — |
| VCC Supply Range | [DATA_NEEDED: VCC min/max typical range] | — |
| Isolation Type | Junction isolation (JI) | — |
| Bootstrap Diode | Integrated | — |
| Propagation Delay (typical) | < 50 ns | — |
| Delay Matching Between Channels | [DATA_NEEDED: delay matching spec in ns] | — |
| UVLO | Present on VCC and VBS | — |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature range in C] | — |
| Корпус | PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad | PG-DSO-8 (DSO-8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Количество выходов | — | 1 |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Время нарастания | — | 15 ns |
| Время спада | — | 30 ns |
| Рабочая температура | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |