2EDL8124GXUMA1 vs 1ED3124MC12HXUMA1 对比

详细并排对比 2EDL8124GXUMA1 出自 Infineon 和 1ED3124MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中

规格对比

参数 2EDL8124GXUMA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $1.45
Driver Configuration Half-bridge (high-side + low-side) —
Input Type Non-inverting, TTL-compatible with hysteresis —
Number of Drivers 2 1
Peak Source Current 3 A 13.5 A
Peak Sink Current 4 A 14 A
Bootstrap Supply (VBS) Maximum 120 V —
VCC Supply Range [DATA_NEEDED: VCC min/max typical range] —
Isolation Type Junction isolation (JI) —
Bootstrap Diode Integrated —
Propagation Delay (typical) < 50 ns —
Delay Matching Between Channels [DATA_NEEDED: delay matching spec in ns] —
UVLO Present on VCC and VBS —
工作温度范围 [DATA_NEEDED: operating temperature range in C] —
封装 PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad PG-DSO-8 (DSO-8)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
输出数量 — 1
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升时间 — 15 ns
下降时间 — 30 ns
工作温度 — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

数据手册与资源

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