BSC011N03LSTATMA1 vs BSC12DN20NS3GATMA1 Сравнение
Подробное сравнение бок о бок BSC011N03LSTATMA1 от Infineon и BSC12DN20NS3GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSC011N03LSTATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | NRND | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,55 | $0,61 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | 39 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) typ | 72 nC | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| Рабочая температура перехода | -55C to +150C | — |
| Корпус | PG-TDSON-8 FL (8-pin, exposed drain pad) | PG-TDSON-8-5 |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | OptiMOS power MOSFET |
| Configuration | Single with built-in diode | Single N-channel |
| Уровень MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Статус RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 200V |
| Тип транзистора | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 11.3 A |
| Power Dissipation (PD, Tc) | — | 50 W |
| Диапазон рабочих температур | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Число выводов | — | 8 |