BSC021N08NS5ATMA1 vs IPT015N10N5ATMA1 Сравнение
Подробное сравнение бок о бок BSC021N08NS5ATMA1 от Infineon и IPT015N10N5ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSC021N08NS5ATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,81 | $2,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC021N08NS5ATMA1 | IPT015N10N5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS™ 5 |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tc=25°C) | 226 A | — |
| Continuous Drain Current (I_D, Tc=100°C) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΩ | — |
| Gate-Source Voltage V_GS max | ±20 V | — |
| Power Dissipation P_D (Tc=25°C) | 214 W | — |
| Рабочая температура перехода | -55 °C to +175 °C | — |
| Корпус | SuperSO8 5x6 (PG-TSON-8-3) | PG-HSOF-8-1 (TOLL) |
| Тип монтажа | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | — |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | — |
| Статус RoHS | Compliant (Pb-free) | Compliant |
| Уровень MSL | MSL 1 (per JEDEC J-STD-020) | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Delivery Form | Tape & Reel (T&R) | — |
| Тип транзистора | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 300 A |
| On-Resistance RDS(on) Max | — | 1.5 mΩ |
| Power Dissipation (PD, Tc) | — | 375 W |
| Configuration | — | Single |
| Рабочая температура | — | -55°C to +175°C |
| Gate Threshold VGS(th) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Output Capacitance (Coss) | — | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | — | Up to 43% reduction |
| Packaging | — | Tape & Reel |