BSC021N08NS5ATMA1 vs IPT015N10N5ATMA1 对比

详细并排对比 BSC021N08NS5ATMA1 出自 Infineon 和 IPT015N10N5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ 量产中

规格对比

参数 BSC021N08NS5ATMA1 IPT015N10N5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.81 $2.78
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC021N08NS5ATMA1 IPT015N10N5ATMA1
Technology OptiMOS 5 (N-channel trench) OptiMOS™ 5
Drain-Source Voltage (V_DS max) 80 V —
Continuous Drain Current (I_D, Tc=25°C) 226 A —
Continuous Drain Current (I_D, Tc=100°C) 100 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max (V_GS=10 V) 2.1 mΩ —
Gate-Source Voltage V_GS max ±20 V —
Power Dissipation P_D (Tc=25°C) 214 W —
工作结温 -55 °C to +175 °C —
封装 SuperSO8 5x6 (PG-TSON-8-3) PG-HSOF-8-1 (TOLL)
安装类型 Surface Mount Surface Mount
Total Gate Charge Q_G typ [DATA_NEEDED: total gate charge] —
R_thJC thermal resistance max [DATA_NEEDED: R_thJC] —
RoHS 状态 Compliant (Pb-free) Compliant
MSL 等级 MSL 1 (per JEDEC J-STD-020) —
Avalanche Energy Rated Yes (single-pulse) —
Delivery Form Tape & Reel (T&R) —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID, Tc) — 300 A
On-Resistance RDS(on) Max — 1.5 mΩ
Power Dissipation (PD, Tc) — 375 W
Configuration — Single
工作温度 — -55°C to +175°C
Gate Threshold VGS(th) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Output Capacitance (Coss) — Reduced up to 44% vs prior generation (per manufacturer claim)
RDS(on) Improvement vs Prior Generation — Up to 43% reduction
Packaging — Tape & Reel

数据手册与资源

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