BSC076N06NS3GATMA1 vs BSZ900N20NS3GATMA1 Сравнение
Подробное сравнение бок о бок BSC076N06NS3GATMA1 от Infineon и BSZ900N20NS3GATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ АктивенInfineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSC076N06NS3GATMA1 | BSZ900N20NS3GATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,65 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 50 A | — |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Диапазон рабочих температур | -55C to +150C | — |
| Корпус | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TSDSON-8 (TDSON-8 FL) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (unlimited) | 1 (unlimited) |
| RoHS Compliance | Compliant | — |
| Без галогенов | Yes (per Infineon product page) | — |
| Part Number | — | BSZ900N20NS3GATMA1 |
| Continuous Drain Current (ID, Tc=25C) | — | 15.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | — | 90 mΩ |
| Typical RDS(on) @ VGS=10V | — | 77 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | — | 3.5 V |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD, Tc=25C) | — | 62.5 W |
| Рабочая температура перехода | — | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Статус RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| ESD Protection | — | Yes (integrated) |
| Avalanche Energy Rated | — | Yes (EAS) |