BSC076N06NS3GATMA1 vs BSZ900N20NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC076N06NS3GATMA1 by Infineon and BSZ900N20NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 β ActiveInfineon
BSZ900N20NS3GATMA1
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSC076N06NS3GATMA1 | BSZ900N20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| Technology | N-Channel Trench MOSFET | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 50 A | β |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΞ© | β |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 69 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TSDSON-8 (TDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (unlimited) |
| RoHS Compliance | Compliant | β |
| Halogen-Free | Yes (per Infineon product page) | β |
| Part Number | β | BSZ900N20NS3GATMA1 |
| Continuous Drain Current (ID, Tc=25C) | β | 15.2 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | β | 90 mΞ© |
| Typical RDS(on) @ VGS=10V | β | 77 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th) typ) | β | 3.5 V |
| Total Gate Charge (Qg typ) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (PD, Tc=25C) | β | 62.5 W |
| Operating Junction Temperature | β | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC] |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| ESD Protection | β | Yes (integrated) |
| Avalanche Energy Rated | β | Yes (EAS) |