BSC077N12NS3GATMA1 vs ISC0703NLSATMA1 Сравнение
Подробное сравнение бок о бок BSC077N12NS3GATMA1 от Infineon и ISC0703NLSATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ Активен
Сравнение характеристик
| Параметр | BSC077N12NS3GATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,71 | $0,51 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 3 (120 V) | — |
| Тип транзистора | N-Channel MOSFET (enhancement-mode trench) | — |
| Drain-Source Voltage (VDS) | 120 V | 60 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| Рабочая температура перехода | -55C to +150C | — |
| Корпус | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8 (5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Число выводов | 8 | — |
| Уровень MSL | 1 | [DATA_NEEDED: MSL level] |
| Статус RoHS | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 13 A |
| Continuous Drain Current (ID) at Tc=25C | — | 57 A |
| Power Dissipation (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 44 W |
| Technology | — | Trench MOSFET (OptiMOS family) |
| Диапазон рабочих температур | — | -55C to +150C (junction) |
| Standard Package Quantity | — | 5,000 (reel) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS rating] |