ISC0703NLSATMA1 - 60V N-Ch MOSFET, 57A, PG-TDSON-8 | Infineon
Артикул: ISC0703NLSATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.95 | $0,95 |
| 10 | $0.86 | $8,60 |
| 100 | $0.78 | $78,00 |
| 500 | $0.71 | $355,00 |
| 1.000 | $0.62 | $620,00 |
| 5.000 | $0.51 | $2.550,00 |
ISC0703NLSATMA1 Обзор
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor device that switches or amplifies signals by varying the conductivity of a channel between source and drain terminals. The "N-Channel" designation indicates the conducting carriers are electrons, which provides higher mobility and lower on-resistance than P-Channel equivalents at the same die size. MOSFETs are classified within the discrete semiconductor hierarchy as a sub-category of transistors, and within power-electronics systems they sit alongside IGBTs and thyristors as the primary switching elements.
Key differentiating features include its 60 V drain-source breakdown voltage which comfortably covers 12 V and 24 V bus rails with substantial avalanche headroom, a low typical on-resistance (RDS(on)) optimized for synchronous-rectification applications, and a PG-TDSON-8 outline that combines compact 5x6 mm board footprint with a thermally efficient exposed pad. The device is rated for surface-mount reflow assembly and is supplied on 13-inch tape-and-reel for high-volume production lines.
Architecturally, ISC0703NLSATMA1 uses Infineon's proprietary trench cell structure that maximizes channel density per unit silicon area, simultaneously reducing on-state conduction loss and gate charge. This combination is critical at high switching frequencies (typically 100 kHz to 1 MHz) where switching losses dominate. The low Qg and Qgd figures support fast turn-on/turn-off transitions, enabling smaller magnetics in isolated and non-isolated converter designs.
Typical applications include synchronous rectification in 24 V to 48 V telecom and server bus converters, primary-side switching in telecom DC-DC bricks, BLDC motor drive half-bridges, hot-swap and OR-ing controllers, and battery protection in 12 V/24 V Li-ion packs. In OR-ing and hot-swap circuits, the MOSFET's avalanche rating and safe operating area (SOA) protect the upstream supply during load transients.
When designing with this part, ensure the gate-drive voltage is held above the full-enhancement threshold (typically 10 V Vgs) during the entire conduction interval to avoid operating in the linear region where conduction loss rises sharply. Place the gate-source resistor (typically 10 to 100 kOhm) close to the device pins to suppress unintended turn-on from dv/dt-induced Miller current. Thermal copper pour directly under the exposed pad is essential because RDS(on) increases with junction temperature.
This page synthesizes distributor pricing, drop-in PG-TDSON-8 alternatives, and practical PCB/thermal design notes not found in the manufacturer datasheet alone, helping engineers select and qualify ISC0703NLSATMA1 for new designs and second-source existing BOMs.
Аналоги без доработки для ISC0703NLSATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с ISC0703NLSATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Drain-Source Voltage (VDS), Operating Temperature Range, Technology, MSL Level.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
ISC080N10NM6ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.05 / шт.
Открыть даташит →BSC077N12NS3GATMA1
✅ Прямая замена✓ В наличии
$0.71 / шт.
Открыть даташит →IAUT300N08S5N011ATMA1
✅ Прямая замена✓ В наличии
$5.4 / шт.
Открыть даташит →ISC015N04NM5ATMA1
✅ Прямая замена✓ В наличии
$0.98 / шт.
Открыть даташит →ISC0703NLSATMA1 Максимальные параметры и электрические характеристики
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta=25C | 13 A |
| Continuous Drain Current (ID) at Tc=25C | 57 A |
| Power Dissipation (PD) at Ta=25C | 3 W |
| Power Dissipation (PD) at Tc=25C | 44 W |
| Technology | Trench MOSFET (OptiMOS family) |
| Корпус | PG-TDSON-8 (5x6 mm) |
| Тип монтажа | Surface Mount |
| Диапазон рабочих температур | -55C to +150C (junction) |
| Standard Package Quantity | 5,000 (reel) |
| Статус RoHS | Compliant |
Конфигурация выводов ISC0703NLSATMA1
| Контакт 1 | Source — Source terminal (connected to central source pad) |
| Контакт 2 | Source — Source terminal (connected to central source pad) |
| Контакт 3 | Source — Source terminal (connected to central source pad) |
| Контакт 4 | Gate — Gate terminal - drive with 10V VGS for full enhancement |
| Контакт 5 | Source — Source terminal (connected to central source pad) |
| Контакт 6 | Source — Source terminal (connected to central source pad) |
| Контакт 7 | Source — Source terminal (connected to central source pad) |
| Контакт 8 | Source — Source terminal (connected to central source pad) |
| Контакт EP | Drain — Exposed pad - Drain terminal; primary thermal path (solder to copper pour) |
Область безопасной работы (DC)
Типичное применение
ISC0703NLSATMA1 подходит для 6 применениеs: 24V Synchronous Rectification, 12V Hot-Swap / OR-ing Controller, BLDC Motor Drive Half-Bridge, Li-ion Battery Protection (12V-24V Pack), USB-PD / 48V Telecom Point-of-Load, Industrial 24V Solenoid / Relay Driver.
24V Synchronous Rectification
The ISC0703NLSATMA1 is engineered for synchronous rectification on 24 V telecom and industrial bus converters. Its 60 V VDS rating provides 36 V of avalanche headroom above a 24 V nominal rail, ensuring robust operation during transient overshoots and load steps. The trench MOSFET architecture delivers low gate charge (Qg) and low Qgd, enabling switching frequencies of 200 to 500 kHz without unacceptable switching loss. Placed as the low-side FET in a half-bridge, paired with a 60 V high-side counterpart, it replaces a Schottky diode to recover reverse-recovery loss and boost efficiency by 2 to 4 percentage points. Verify continuous drain current against the design's worst-case DC load and ensure the exposed drain pad is fully covered by copper pour with thermal vias.
Рекомендуется
12V Hot-Swap / OR-ing Controller
In 12 V server and telecom OR-ing circuits, the ISC0703NLSATMA1 acts as the series pass element that isolates a failed power supply from the live bus. Its 60 V VDS rating easily covers 12 V nominal with headroom for hot-plug transients, and the 57 A continuous drain current at Tc=25C supports multi-hundred-watt supply rails. The trench cell structure provides low on-resistance that minimizes forward voltage drop and heat dissipation under normal operation, while the SOA curve guarantees survival during load-step and short-circuit events. Gate drive is typically provided by a dedicated OR-ing controller IC that regulates turn-on via the gate pin. Thermal copper pour under the exposed drain pad is essential for reliable hot-swap operation.
Рекомендуется
BLDC Motor Drive Half-Bridge
The ISC0703NLSATMA1 is well suited for low-voltage BLDC motor drive half-bridges in tools, fans, and small e-mobility systems. Its 13 A continuous drain current at Ta=25C comfortably drives 50 to 150 W motors, and the PG-TDSON-8 package keeps the design compact. The low gate charge supports PWM frequencies above 20 kHz, eliminating audible motor whine. Three half-bridges (six MOSFETs) form a standard 3-phase inverter; the ISC0703NLSATMA1 serves equally as the high-side or low-side switch. Use a gate driver with 10 V VGS enhancement to keep RDS(on) at its minimum value and avoid the linear-region conduction losses that would otherwise heat the device.
Рекомендуется
Li-ion Battery Protection (12V-24V Pack)
The ISC0703NLSATMA1 serves as the main disconnect switch in 12 V and 24 V Li-ion battery management systems (BMS), where it interrupts the pack output during over-current, over-voltage, or short-circuit events. Its 60 V VDS handles the maximum stacked-cell voltage of a 24 V pack with margin, and the trench technology provides low RDS(on) that minimizes voltage drop during normal discharge - directly extending usable battery capacity. The exposed drain pad ties to the package tab for efficient heat removal during sustained fault conditions. Pair with a dedicated battery protection IC that drives the gate and monitors pack voltage and current. Confirm avalanche rating supports the expected inductive kickback.
Рекомендуется
USB-PD / 48V Telecom Point-of-Load
In 48 V telecom point-of-load (POL) converters and high-power USB-PD source applications, the ISC0703NLSATMA1 operates as the primary-side or secondary-side switch in isolated DC-DC topologies. The 60 V VDS provides 12 V of headroom above 48 V nominal, comfortably withstanding transient overshoots during load steps. The trench MOSFET's low Qg and Qgd support 100 to 300 kHz switching frequencies, enabling small planar magnetics and high power density. In synchronous-forward and half-bridge topologies, two ISC0703NLSATMA1 parts share the switching node, sharing thermal copper pour to spread losses across the PCB. Verify gate-drive symmetry to avoid cross-conduction at high dV/dt.
Рекомендуется
Industrial 24V Solenoid / Relay Driver
Industrial 24V solenoid and relay driver modules benefit from the ISC0703NLSATMA1's 60 V VDS rating and 57 A pulsed current capability. The MOSFET switches the inductive load via a low-side topology, with a flyback diode clamping the inductive kickback during turn-off. The trench cell structure handles repetitive switching events in PWM-driven solenoid proportional-control applications without thermal runaway. The PG-TDSON-8 package fits standard industrial driver footprints and supports automated reflow assembly. Always include a gate-source resistor (10 to 100 kOhm) to suppress false turn-on from high dV/dt coupling during flyback transitions, especially at 24V with inductive loads.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для ISC0703NLSATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | ISC080N10NM6ATMA1 | BSC077N12NS3GATMA1 | IAUT300N08S5N011ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 (5x6 mm) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| Drain-Source Voltage (VDS) | 60 V | 100 V | 120 V | 80 V | 40 V |
| Technology | Trench MOSFET (OptiMOS) | Trench MOSFET (OptiMOS 6) | Trench MOSFET (OptiMOS 3) | Trench MOSFET (OptiMOS 5) | Trench MOSFET (OptiMOS 5) |
| Automotive Qualified | No | No | No | Yes (AEC-Q101) | No |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Ключевые отличия
- 60V VDS rating optimized for 24V industrial bus rails (против ISC015N04NM5ATMA1 (40V part))
- Infineon OptiMOS trench technology with low gate charge (против Generic industry 60V MOSFET)
- Compact PG-TDSON-8 5x6 mm package with high current capability (против Larger DPAK or D2PAK packages)
Заметки по проектированию
Estimated: at 30 A continuous drain current with a typical RDS(on) of ~5 mOhm at Tj=100C, conduction loss is ~4.5 W. The PG-TDSON-8 thermal resistance (theta_JA) on a standard 1-square-inch 1 oz copper pour is roughly 50 C/W, so junction rise is approximately 225C above ambient. This is far above the 150C rating - either increase copper area to 2+ square inches on top and inner layers, add a 6 to 10 via array (0.3 mm drill) under the exposed pad, or reduce continuous current. Always validate against the actual SOA curve from the manufacturer datasheet at the design's worst-case VDS and pulse duration.
Place the gate-drive resistor (typically 10 to 100 kOhm from gate to source) within 5 mm of the gate pin to suppress false turn-on from dv/dt-induced Miller current. The exposed drain pad must be soldered to a continuous copper pour covering at least 1 square inch on the top layer, with thermal vias (0.3 mm drill, 1 mm pitch) connecting to inner ground/power planes. Use a non-solder-mask-defined (NSMD) pad for the exposed drain to improve solder joint reliability and thermal conductivity. Star-ground the gate-drive return path to avoid sharing impedance with the source lead.
Keep the high-di/dt switching loop (drain-to-source of MOSFET plus decoupling capacitors) as small as physically possible - aim for less than 10 nH of loop inductance. A larger loop creates voltage overshoot during turn-off that can exceed the VDS rating and destroy the device. Place the gate driver as close to the gate pin as practical, and use a Kelvin source connection (separate source-sense pin or 4-wire gate-drive return) when available to eliminate source-inductance feedback in the gate-drive loop. For half-bridge layouts, place high-side and low-side MOSFETs symmetrically about the switching-node copper pour.
Do not operate the ISC0703NLSATMA1 with VGS below 10 V during continuous conduction - the part enters the linear region where RDS(on) rises sharply, conduction loss soars, and the device thermally runs away. Do not exceed the avalanche energy rating during inductive switching events - add a snubber or TVS clamp if the design includes motors, solenoids, or transformers with significant leakage inductance. Finally, do not rely on the bare-minimum exposed-pad copper pour for thermal management; thermal vias are mandatory for production designs.
In high-frequency switching applications (above 200 kHz), the gate-drive trace should be treated as a transmission line. Use a gate-drive resistor (typically 10 to 47 ohm) close to the gate pin to damp ringing, and avoid running the gate trace parallel to the drain switching node. For gate voltages above 10 V, place a 10 kOhm pull-down resistor from gate to source to ensure the device stays off when the gate driver is tri-stated during power-up. If the design includes long cables or motor leads, add a TVS diode across the drain-source to clamp inductive transients below the VDS rating.
Информация о соответствии
RoHS compliant per Infineon product page; AEC-Q100 not qualified - choose IAUT300N08S5N011ATMA1 for automotive-grade applications.
