BSC0921NDIATMA1 vs BSZ0901NSIATMA1 Сравнение
Подробное сравнение бок о бок BSC0921NDIATMA1 от Infineon и BSZ0901NSIATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSC0921NDIATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,68 | $0,34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 25V (N-channel) | OptiMOS trench N-channel MOSFET |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 17 A (per channel) | — |
| Pulsed Drain Current (IDM) | 31 A (per channel, package-limited) | — |
| Total Power Dissipation (PD) | 1 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| Gate Charge (Qg) | Ultra-low (OptiMOS 25V family characteristic) | — |
| Output Charge (Qoss) | Ultra-low (OptiMOS 25V family characteristic) | — |
| Корпус | PG-TISON-8 (8-pin, exposed pad) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | -55C to +150C (junction) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 (per Infineon OptiMOS family) | — |
| Primary Application | Synchronous buck converters, VRMs, POL regulators | — |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Число выводов | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Диапазон рабочих температур | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |