BSC0921NDIATMA1 vs BSZ0901NSIATMA1 Comparaison
Comparaison détaillée côte à côte de BSC0921NDIATMA1 par Infineon et BSZ0901NSIATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC0921NDIATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,68 | $0,34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 25V (N-channel) | OptiMOS trench N-channel MOSFET |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 17 A (per channel) | — |
| Pulsed Drain Current (IDM) | 31 A (per channel, package-limited) | — |
| Total Power Dissipation (PD) | 1 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| Gate Charge (Qg) | Ultra-low (OptiMOS 25V family characteristic) | — |
| Output Charge (Qoss) | Ultra-low (OptiMOS 25V family characteristic) | — |
| Boîtier | PG-TISON-8 (8-pin, exposed pad) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | -55C to +150C (junction) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 (per Infineon OptiMOS family) | — |
| Primary Application | Synchronous buck converters, VRMs, POL regulators | — |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Nombre de broches | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Plage de température de fonctionnement | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |