BSC155N06NDATMA1 vs BSC0901NSIATMA1 Сравнение
Подробное сравнение бок о бок BSC155N06NDATMA1 от Infineon и BSC0901NSIATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSC155N06NDATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,62 | $0,38 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC155N06NDATMA1 | — |
| Technology | OptiMOS 3 (N-channel trench) | OptiMOS 25V N-Channel Power MOSFET |
| Configuration | Dual N-channel MOSFET array | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Диапазон рабочих температур | -55 C to +175 C | -55 C to +150 C |
| Корпус | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W | — |
| Уровень MSL | 1 | 1 |
| Статус RoHS | Compliant (Pb-free plating) | Compliant |
| Lead-Free Plating | Yes | — |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-State Resistance (RDS(on)) at VGS=10V | — | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2.2 V max |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 69 W |
| Число выводов | — | 8 |
| Без галогенов | — | Yes |