BSC155N06NDATMA1 vs BSC0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSC155N06NDATMA1 by Infineon and BSC0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0901NSIATMA1
BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon
BSC0901NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC155N06NDATMA1 | BSC0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.38 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC155N06NDATMA1 | β |
| Technology | OptiMOS 3 (N-channel trench) | OptiMOS 25V N-Channel Power MOSFET |
| Configuration | Dual N-channel MOSFET array | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc=25C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max at VGS=10V | 15.5 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Operating Temperature Range | -55 C to +175 C | -55 C to +150 C |
| Package | PG-TDSON-8-4 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Power Dissipation (Tc=25C) | 50 W | β |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Lead-Free Plating | Yes | β |
| Shoot-Through Immunity Qgd/Qgs | < 0.8 | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 28 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| On-State Resistance (RDS(on)) at VGS=10V | β | 2.0 mOhm typical |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2.2 V max |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge nC] |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 69 W |
| Pin Count | β | 8 |
| Halogen-Free | β | Yes |