EP2A40F1020I8N vs EP2A40F1020C8N Сравнение
Подробное сравнение бок о бок EP2A40F1020I8N от Intel и EP2A40F1020C8N от Intel. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | EP2A40F1020I8N | EP2A40F1020C8N |
|---|---|---|
| Бренд | Intel | Intel |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Obsolete | Obsolete |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $125,40 | $0,00 |
| Family | APEX II (EP2A40) | — |
| Logic Elements | 38,400 cells | — |
| System Gates | 1.5 M (typical) | — |
| Process Technology | 0.15 um CMOS | — |
| Core Voltage | 1.5 V | — |
| Maximum Internal Frequency | 376 MHz | — |
| User I/O Count | 735 (maximum) | — |
| Корпус | 1020-pin FC-FBGA (Flip-Chip Fine-pitch BGA) | — |
| Тип монтажа | Surface Mount (BGA) | Surface Mount |
| Operating Temperature Grade | Industrial (-40 C to +100 C) / 'I' suffix | — |
| Speed Grade | 8 | — |
| Architecture | LUT-based with embedded system blocks (ESBs) | — |
| Configuration | SRAM-based, JTAG / passive serial / passive parallel | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Number of PLLs | [DATA_NEEDED: PLL count] | — |
| Total Embedded Memory | [DATA_NEEDED: embedded memory bits] | — |
| Product Type | — | Field-Programmable Gate Array (FPGA) |
| Device Family | — | APEX II |
| Logic Technology | — | CMOS |
| Logic Gates | — | 1.5 million |
| Logic Cells | — | 38,400 |
| Nominal Supply Voltage | — | 1.5 V |
| Supply Voltage Range | — | 1.425 V to 1.575 V |
| User I/Os | — | 735 |
| Package Terminal Count | — | 1,020 pins |
| Package Type | — | FC-FBGA, BGA-1020 |
| Package Body Size | — | 33 mm x 33 mm |
| Ball Pitch | — | 1 mm |
| Reported Operating Frequency | — | 376 MHz |
| Alternative Reported Frequency | — | 562 MHz |
| Reported Propagation Delay | — | 1.78 ns |
| Alternative Reported Propagation Delay | — | 1.55 ns |
| Fabrication Process | — | 0.15 µm |
| Maximum Reported Metal Layers | — | 8 layers |
| Рабочая температура | — | 0 °C to 85 °C |
| Terminal Form | — | Ball |
| REACH Status | — | unknown |
| AEC-Q100 Qualification | — | unknown |