EP3SL200H780C4L vs EP3SL200H780I4L Сравнение
Подробное сравнение бок о бок EP3SL200H780C4L от Intel и EP3SL200H780I4L от Intel. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | EP3SL200H780C4L | EP3SL200H780I4L |
|---|---|---|
| Бренд | Intel | Intel |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | NRND |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $6.459,35 | $1.395,00 |
| Manufacturer | Intel (formerly Altera) | — |
| Series | Stratix III | — |
| Device Type | FPGA - Field Programmable Gate Array | — |
| Logic Elements | 200,000 | 200,000 |
| Embedded Memory | 6.5 Mbit | — |
| User I/O Count | 488 | — |
| Package Type | 780-ball FCBGA (FineLine BGA, HBGA) | — |
| Package Code | BGA-780 / PBGA780 / HBGA-780 | — |
| Package Mounting | Surface Mount | — |
| Internal Logic Frequency | up to 717 MHz (per ampheo datasheet brief) | — |
| Speed Grade | -4 (medium performance, commercial) | I4 (Industrial) |
| Рабочая температура | 0C to 85C (commercial) | -40C to +100C (Industrial) |
| Lead-Free / Pb-Free | Yes (L suffix, lead-free) | — |
| Статус RoHS | Compliant | Compliant |
| Process Technology | TSMC 40 nm | 65 nm CMOS |
| Configuration Modes | FPP, AS, PS, JTAG | — |
| Family | — | Stratix III L |
| Logic Array Blocks (LABs) | — | 8,000 |
| Embedded Memory (Bits) | — | 10,901,504 |
| Maximum User I/O | — | 488 |
| Core Supply Voltage | — | 0.86 V to 1.15 V |
| Internal Performance | — | 375 MHz |
| Корпус | — | 780-pin FC-HFBGA (Flip-Chip) |
| Тип монтажа | — | Surface Mount |
| Transceivers | — | Up to 24 channels |
| Transceiver Data Rate | — | Up to 6.375 Gbps |
| DSP Blocks | — | 9x9 / 18x18 / 36x36 multipliers |
| Memory Interface Support | — | DDR3, DDR2, DDR, QDR II+, RLDRAM II |
| JTAG Support | — | IEEE Std 1149.1 Boundary-Scan |
| HardCopy Support | — | Compatible (Lattice-style migration path via HardCopy III) |