EPF10K50VRC240-4 vs EPF10K50VR1240-4 Сравнение
Подробное сравнение бок о бок EPF10K50VRC240-4 от Altera и EPF10K50VR1240-4 от Altera. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Altera
EPF10K50VRC240-4 - 50K Gate FLEX-10K FPGA, 240-Pin RQFP | Altera / Intel
EPF10K50VRC240-4 Nrnd
Сравнение характеристик
| Параметр | EPF10K50VRC240-4 | EPF10K50VR1240-4 |
|---|---|---|
| Бренд | Altera | Altera |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | NRND | Obsolete |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $85,30 | $42,00 |
| Family | FLEX-10K | FLEX 10K Embedded Programmable Logic Device |
| Typical Gates | 50,000 | 20,480 |
| Logic Elements (LEs) | 2,880 | — |
| Logic Array Blocks (LABs) | 360 | — |
| Maximum User I/Os | 189 | — |
| Embedded Array Blocks (EABs) | 10 (each up to 2,048 bits) | Yes (per family datasheet) |
| Корпус | 240-pin RQFP (RQFP-240) with exposed pad | 240-BFQFP Exposed Pad |
| Тип монтажа | Surface Mount | Surface Mount |
| Core Voltage (VCCINT) | 3.3 V | — |
| I/O Voltage (VCCIO) | 3.3 V or 5.0 V tolerant | — |
| Speed Grade | -4 | -4 (slowest in family) |
| Internal Frequency (max) | 125 MHz | — |
| Propagation Delay (per LE) | 0.6 ns | — |
| Рабочая температура | 0C to +70C (commercial) | [DATA_NEEDED: industrial/commercial temperature grade] |
| Configuration Method | SRAM, serial/parallel via EPC2/EPC8 PROM | SRAM, JTAG (ByteBlaster/BitBlaster) |
| Programming Interface | JTAG (IEEE 1149.1), ByteBlaster, BitBlaster | — |
| Статус RoHS | Non-compliant (legacy SnPb lead frame) | [DATA_NEEDED: not stated in verified data] |
| Lead-Free | No (commercial grade is SnPb; -N suffix is lead-free) | [DATA_NEEDED: not stated in verified data] |
| Series | — | FLEX 10K (V-series, 5V core) |
| Maximum Logic Elements | — | 2,880 |
| Pin/Pinout Code | — | R1240 (240-pin BFQFP) |
| User I/O | — | [DATA_NEEDED: exact user I/O count for R1240 pinout] |
| Process Technology | — | 0.42 µm CMOS SRAM |
| Core Supply Voltage | — | 5 V |
| I/O Supply Voltage | — | 5 V / 3.3 V (multi-voltage I/O) |