FDP86363-F085 vs IRFB3207ZPBF Сравнение
Подробное сравнение бок о бок FDP86363-F085 от onsemi и IRFB3207ZPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
onsemi
FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi
FDP86363-F085 ⚠ Последняя закупка
Сравнение характеристик
| Параметр | FDP86363-F085 | IRFB3207ZPBF |
|---|---|---|
| Бренд | onsemi | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Последняя закупка | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,18 | $1,62 |
| Drain-Source Voltage (V(BR)DSS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25C | 110 A | 120 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: single-pulse IDM rating] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance Rds(on) at Vgs=10V | 2.8 mOhm typical | — |
| On-Resistance Rds(on) max at Vgs=10V | [DATA_NEEDED: max Rds(on) at Vgs=10V] | — |
| Gate Threshold Voltage Vgs(th) | [DATA_NEEDED: Vgs(th) min/typ/max] | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Junction-to-Case Thermal Resistance RthetaJC | 0.5 C/W | — |
| Junction-to-Ambient Thermal Resistance RthetaJA | 62.5 C/W (on 1 in^2 pad of 2oz copper per datasheet) | — |
| Диапазон рабочей температуры перехода | -55C to +175C | — |
| Package Type | TO-220-3 (TO-220AB) | — |
| Тип монтажа | Through Hole | Through Hole |
| Polarity / Channel Type | N-Channel | — |
| Technology | PowerTrench (shielded-gate trench) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Статус RoHS | Compliant | — |
| Lead-Free / Halogen-Free | [DATA_NEEDED: explicit halogen-free claim] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Silicon-Limited Drain Current | — | 170 A |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Рабочая температура перехода | — | -55 C to +175 C |
| Корпус | — | TO-220AB (3-lead through-hole) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Уровень MSL | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |