IRFB3207ZPBF - 75V N-Channel HEXFET MOSFET 170A | Infineon
Артикул: IRFB3207ZPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.18 | $218,00 |
| 500 | $1.89 | $945,00 |
| 1.000 | $1.62 | $1.620,00 |
IRFB3207ZPBF Обзор
A HEXFET power MOSFET is a specific Infineon (formerly International Rectifier) family of N-channel enhancement-mode power MOSFETs built on a hex-cellular planar process. Within the broader taxonomy, a HEXFET sits under N-channel MOSFET -> MOSFET -> discrete power semiconductor -> power management discrete. The TO-220AB package, with its three through-hole leads and metal tab acting as the drain, has been the industry workhorse for medium-current through-hole power designs for over three decades and is favored for hand-soldered prototypes and high-current industrial converters.
Key features of the IRFB3207ZPBF include 75V drain-source breakdown (VDS), a continuous drain current ID of 120A at TC=25C (170A silicon-limited), pulsed avalanche current rating, low gate charge, and RoHS-compliant lead-free terminal finish. It supports both standard gate-drive levels (10V) and logic-level operation in many circuits. The PBF suffix denotes lead-free Pb-free plating compliant with RoHS, while the through-hole TO-220AB tab doubles as a heatsink-mounting surface.
Typical applications include high-efficiency synchronous rectification in switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), DC motor drives, battery-operated drives, solar inverters, and hard-switched high-frequency circuits. The part is well suited for AC-to-DC primary-side switching in industrial power conversion where its low RDS(on) minimizes conduction loss. In solar MPPT boost stages and three-phase inverter legs, the Z-variant's ruggedness margin protects against reverse-recovery transients and avalanche events that occur during abnormal load steps.
When designing with the IRFB3207ZPBF, calculate conduction loss as P = ID^2 x RDS(on) x (1 + 0.005 x (TJ - 25)) and ensure the heatsink keeps TJ below 175C. The TO-220AB tab is electrically live (drain), so an insulating thermal interface material (silicone pad or Kapton tape) is mandatory when mounting to a grounded chassis. Always observe safe operating area at high VDS and ID combinations.
This page synthesizes distributor pricing, drop-in cross-reference equivalents, and practical heatsink and layout design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для IRFB3207ZPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRFB3207ZPBF (тот же форм-фактор и посадочное место) — отличается по Technology, Package, Total Gate Charge (Qg), Drain-Source Voltage (VDS), MSL Level.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRFB3207PBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFB3077PBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFB3206PBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFB4020PBF
✅ Прямая замена✓ В наличии
$1.38 / шт.
Открыть даташит →IRL3705NPBF
✅ Прямая замена✓ В наличии
$0.92 / шт.
Открыть даташит →STP75NF75
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFB3207ZPBF Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRFB3207ZPBF |
| Series | HEXFET |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID) at TC=25C | 120 A |
| Silicon-Limited Drain Current | 170 A |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm |
| Power Dissition (PD) at TC=25C | 300 W |
| Рабочая температура перехода | -55 C to +175 C |
| Корпус | TO-220AB (3-lead through-hole) |
| Тип монтажа | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) |
| Уровень MSL | N/A (through-hole) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) |
Конфигурация выводов IRFB3207ZPBF
| Контакт 1 | Gate — Gate drive input; standard 10V VGS for full enhancement |
| Контакт 2 | Drain — Power drain connection (also electrically tied to the metal tab) |
| Контакт 3 | Source — Source return; connect to circuit ground reference |
IRFB3207ZPBF Область безопасной работы (DC)
Типичное применение
IRFB3207ZPBF подходит для 6 применениеs: High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS) Battery Switch, DC Motor Drive H-Bridge Switch, Solar MPPT Boost Converter Switch, Battery-Operated Forklift / E-Bike Traction Drive, Hard-Switched High-Frequency Inverter.
High-Efficiency Synchronous Rectification in SMPS
The IRFB3207ZPBF is purpose-built for synchronous rectifier positions in switch-mode power supplies at the secondary side of 24V and 48V bus converters. Its 3.3 mOhm typical RDS(on) at VGS=10V reduces conduction loss by approximately 60 percent compared to a Schottky diode at the same current, which directly improves overall converter efficiency at high load. The 75V VDS rating comfortably covers 48V telecom rails with full avalanche margin for transformer-induced overshoot. The Z-suffix ruggedness withstands the hard-commutation dV/dt events of CCM PFC stages. In a 1 kW half-bridge rectifier leg, two parallel IRFB3207ZPBF devices keep rectifier loss under 15W, eliminating heatsink fan requirements.
Рекомендуется
Uninterruptible Power Supply (UPS) Battery Switch
The IRFB3207ZPBF serves as the battery disconnect and hot-swap switch in line-interactive and online UPS systems operating at 48V battery bus. Its 120A continuous rating handles the full inverter surge rating, while the 75V VDS rating absorbs the inductive kick of battery cable inductance at disconnect. The 3.3 mOhm RDS(on) limits voltage drop across the switch to less than 0.4V at 120A, preserving battery runtime and reducing I^2R heating in the wiring harness. The Z-suffix ruggedness prevents avalanche failure during simultaneous battery-rectifier transfer events.
Рекомендуется
DC Motor Drive H-Bridge Switch
In brushed DC motor drives for industrial automation and electric vehicles, the IRFB3207ZPBF forms the low-side switches of a discrete H-bridge operating from a 24V to 60V bus. Its 170A silicon-limited rating handles motor stall currents with margin, while the TO-220AB package mounts directly to an aluminum chassis heatsink via an insulating thermal pad. The Z-variant's improved dV/dt ruggedness prevents shoot-through induced avalanche failures during PWM transitions at 20 kHz. With RDS(on) of 3.3 mOhm the per-FET conduction loss at 50A is only 8.25W, keeping the H-bridge efficiency above 97 percent at rated load.
Рекомендуется
Solar MPPT Boost Converter Switch
The IRFB3207ZPBF is used as the boost switch in solar maximum power point tracking (MPPT) converters for off-grid and grid-tie systems at the battery-side boost node. Its 75V VDS rating covers 48V battery banks with margin for transformer and wiring inductance spikes, and the 3.3 mOhm RDS(on) maximizes boost efficiency above 98 percent. The Z-variant ruggedness is critical during open-circuit MPPT sweep transients, where the inductor energy can momentarily exceed the FET avalanche rating. With an aluminum substrate PCB or clip-on heatsink, continuous 60A operation is achievable in a compact MPPT module housing.
Рекомендуется
Battery-Operated Forklift / E-Bike Traction Drive
The IRFB3207ZPBF is used in traction motor controllers for electric forklifts, e-bikes, and neighborhood electric vehicles operating at 36V to 48V nominal battery voltage. Its 120A continuous rating provides the peak torque current needed for vehicle launch, while the 3.3 mOhm RDS(on) minimizes voltage drop across the controller to extend driving range per charge cycle. The ruggedized Z-suffix withstands the back-EMF transients generated during regenerative braking, which can momentarily exceed the DC bus voltage by 30 to 40 percent. TO-220AB through-hole packaging simplifies hand-repairable designs and field service.
Рекомендуется
Hard-Switched High-Frequency Inverter
In hard-switched half-bridge and full-bridge inverters for induction heating, ultrasonic cleaners, and welding power supplies, the IRFB3207ZPBF serves as the primary switching element. The Z-suffix variant is engineered specifically for the harsh switching transients of hard-switched topologies, with improved gate charge, lower internal capacitance, and higher avalanche energy rating than the IRFB3207PBF baseline. At switching frequencies of 50 to 200 kHz, the IRFB3207ZPBF's switching loss remains manageable due to its moderate Crss/Ciss ratio. The 75V VDS rating supports 48V DC bus designs with generous headroom for transformer leakage inductance spikes.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRFB3207ZPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRFB3207PBF | IRFB3077PBF | IRFB3206PBF | STP75NF75 |
|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics |
| VDS (Drain-Source Voltage) | 75 V | 75 V | 75 V | 60 V | 75 V |
| Continuous Drain Current (TC=25C) | 120 A | 120 A | 76 A | 120 A | 80 A |
| Power Dissipation (TC=25C) | 300 W | 300 W | 200 W | 300 W | 300 W |
| Ruggedness (Z-suffix) | Yes (improved avalanche + dV/dt) | No (baseline) | No | No | Standard |
| RoHS / Lead-Free | Yes (PBF suffix) | Yes | Yes | Yes | Yes |
| Unit Price @ 1pc (USD, as of 2026-09-14) | $2.85 | $2.50 | $3.20 | $2.40 | $2.10 |
Ключевые отличия
- Z-suffix ruggedness upgrade over IRFB3207PBF baseline (против IRFB3207PBF)
- Lower RDS(on) than cross-brand STP75NF75 (против STP75NF75)
- Higher voltage rating than IRFB3206PBF (против IRFB3206PBF)
- Higher continuous current than IRFB3077PBF (против IRFB3077PBF)
Заметки по проектированию
Estimated: at ID=120A continuous and RDS(on)=3.3 mOhm typical, conduction loss is P = 120^2 x 0.0033 = 47.5W. The TO-220AB junction-to-case thermal resistance is approximately 0.5 C/W, so junction temperature rise above case at full load is about 24C. With a clip-on heatsink having thermal resistance of 2 C/W and case-to-ambient thermal pad resistance of 0.5 C/W, total junction-to-ambient is 3 C/W. At 25C ambient, junction reaches 25 + 47.5 x 3 = 168C, dangerously close to the 175C maximum. Either reduce continuous current to 100A or upgrade to a fan-cooled heatsink with thermal resistance below 1 C/W. Always verify with the manufacturer's thermal curves in the datasheet SOA section.
The metal tab of the TO-220AB package is electrically tied to the Drain pin (pin 2). When mounting to a grounded chassis heatsink, always use an insulating thermal interface material such as a silicone rubber pad (Wakefield 173-7 or similar) plus a plastic shoulder washer on the mounting screw. Without insulation, the Drain will be shorted to chassis ground, destroying the MOSFET and potentially the gate driver. Alternatively, mount to a floating heatsink with a fan-cooled or liquid-cooled design where insulation is provided by the heatsink design itself.
Minimize the source-inductance loop between the IRFB3207ZPBF source pin and the gate driver's ground return. Use a star-ground topology or a 4-layer PCB with a dedicated ground plane directly under the source lead. Source inductance of more than 5 nH causes gate voltage overshoot during turn-off, which can exceed VGS(max)=20V and trigger gate oxide rupture. Place the gate-driver output within 10mm of the gate pin and use a 10-ohm gate resistor to damp the LC resonance.
Never operate the IRFB3207ZPBF above its VDS=75V rating, even transiently. Avalanche breakdown above 75V can occur in microseconds and permanently damage the part. For 48V battery bus designs add at least 10V of margin (so peak VDS must stay below 65V), which requires a clamp snubber or TVS across the drain-source junction. Also note the silicon-limited current of 170A is NOT a continuous rating - the bond wires cannot sustain this current without failure; respect the 120A TC=25C continuous rating for production designs.
Информация о соответствии
RoHS compliant and lead-free (PBF suffix) per Infineon product page. Not AEC-Q100 qualified; for automotive designs use the AU-prefixed variants. Halogen-free status not explicitly stated in the verified web data.
