IAUC28N08S5L230ATMA1 vs IAUC100N04S6L014ATMA1 Сравнение
Подробное сравнение бок о бок IAUC28N08S5L230ATMA1 от Infineon и IAUC100N04S6L014ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ АктивенInfineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC28N08S5L230ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,71 | $0,72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | 28 A | — |
| Pulsed Drain Current (I<sub>DM</sub>) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 23 mΩ (typ) | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | 2.5 V | — |
| Gate Charge (Q<sub>g</sub>, typ) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 38 W | — |
| Рабочая температура перехода | -55 °C to +175 °C | — |
| Корпус | PG-TDSON-8-33 (5x6 mm SSO8) | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 Power MOSFET | OptiMOS 6 |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | [DATA_NEEDED: MSL rating] | 1 |
| Part Family | — | IAUC / OptiMOS 6 40V |
| Тип транзистора | — | N-Channel MOSFET |
| Mode | — | Enhancement |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max (V_GS=10V) | — | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | — | 100 W |
| Диапазон рабочих температур | — | -55C to +175C |
| AEC-Q101 Qualification | — | Yes |
| Packaging | — | Tape & Reel (ATMA1 suffix) |