IAUC28N08S5L230ATMA1 vs IAUC100N04S6L014ATMA1 对比

详细并排对比 IAUC28N08S5L230ATMA1 出自 Infineon 和 IAUC100N04S6L014ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 ✓ 量产中

规格对比

参数 IAUC28N08S5L230ATMA1 IAUC100N04S6L014ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $0.72
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-5 —
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) 28 A —
Pulsed Drain Current (I<sub>DM</sub>) [DATA_NEEDED: pulsed drain current] —
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) 23 mΩ (typ) —
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) 2.5 V —
Gate Charge (Q<sub>g</sub>, typ) [DATA_NEEDED: total gate charge] —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) 38 W —
工作结温 -55 °C to +175 °C —
封装 PG-TDSON-8-33 (5x6 mm SSO8) PG-TDSON-8 (SuperSO8, 5x6 mm)
安装类型 Surface Mount Surface Mount
Technology OptiMOS-5 Power MOSFET OptiMOS 6
Automotive Qualified Yes (AEC-Q101) —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1
Part Family — IAUC / OptiMOS 6 40V
晶体管类型 — N-Channel MOSFET
Mode — Enhancement
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
R_DS(on) max (V_GS=10V) — 1.4 mOhm
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G typical]
Power Dissipation (P_D, Tc) — 100 W
工作温度范围 — -55C to +175C
AEC-Q101 Qualification — Yes
Packaging — Tape & Reel (ATMA1 suffix)

数据手册与资源

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