IAUC41N06S5L100ATMA1 vs IAUC28N08S5L230ATMA1 Сравнение
Подробное сравнение бок о бок IAUC41N06S5L100ATMA1 от Infineon и IAUC28N08S5L230ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
IAUC41N06S5L100ATMA1 ✓ АктивенInfineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC41N06S5L100ATMA1 | IAUC28N08S5L230ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,43 | $0,71 |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS-5 Power MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tj) | 41 A | — |
| Power Dissipation (PD, TC) | 42 W | — |
| On-State Resistance (RDS(on)) max | 10 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Диапазон рабочих температур | -55C to +175C | — |
| Корпус | PG-TDSON-8-33 (TDSON-8, 5x6 mm) | PG-TDSON-8-33 (5x6 mm SSO8) |
| Тип монтажа | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Automotive Qualified | Yes (AEC-Q101 automotive grade) | Yes (AEC-Q101) |
| Статус RoHS | Compliant | Compliant |
| Interconnect | Copper clip (low-inductance) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | — | 28 A |
| Pulsed Drain Current (I<sub>DM</sub>) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | — | 23 mΩ (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | — | 2.5 V |
| Gate Charge (Q<sub>g</sub>, typ) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | — | 38 W |
| Рабочая температура перехода | — | -55 °C to +175 °C |