IAUC60N04S6L039ATMA1 vs IPG20N10S436AATMA1 Сравнение
Подробное сравнение бок о бок IAUC60N04S6L039ATMA1 от Infineon и IPG20N10S436AATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon
IPG20N10S436AATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUC60N04S6L039ATMA1 | IPG20N10S436AATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,72 | $0,68 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | — |
| Pulsed Drain Current (I_DM) | 240 A | — |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P_D) | 42 W | — |
| Рабочая температура перехода | -55C to +175C | — |
| Корпус | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-10 (Wettable Flank) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (per JEDEC J-STD-020) | MSL1 (260 C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Статус RoHS | Compliant | Compliant (Green Product) |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Configuration | — | Dual N-Channel (2 Elements with Built-in Diode) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Total Power Dissipation (PD) | — | 43 W |
| Operating Mode | — | Enhancement Mode |
| Operating Temperature (TJ max) | — | +175 C |
| JESD-609 Code | — | e3 |
| Avalanche Tested | — | 100% |
| AOI Compatible | — | Yes (Wettable Flank) |
| Channel Type | — | N-Channel Normal Level |