IAUCN04S7N024HATMA1 vs IAUC60N04S6L030HATMA1 Сравнение
Подробное сравнение бок о бок IAUCN04S7N024HATMA1 от Infineon и IAUC60N04S6L030HATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon
IAUCN04S7N024HATMA1 ✓ АктивенInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN04S7N024HATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,98 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 40 V | — |
| Configuration | Dual N-Channel (independent) | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 100 A | — |
| On-Resistance R_DS(on) typ | 2.46 mΩ at V_GS = 10 V | — |
| On-Resistance R_DS(on) max | [DATA_NEEDED: max R_DS(on) at 10 V V_GS] | — |
| Maximum Power Dissipation (Tc) | 75 W | — |
| Корпус | PG-TDSON-8-56 (SSO8 HB 5x6 mm) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature range] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| Technology | OptiMOS-7 trench-gate | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: typical V_GS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Packing | Tape & Reel | — |
| Part Series | — | OptiMOS 6 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Рабочая температура перехода | — | -55 C to +175 C |