IAUCN04S7N024HATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N024HATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N024HATMA1
IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΞ© | Infineon
IAUCN04S7N024HATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N024HATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 40 V | β |
| Configuration | Dual N-Channel (independent) | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Tj) | 100 A | β |
| On-Resistance R_DS(on) typ | 2.46 mΞ© at V_GS = 10 V | β |
| On-Resistance R_DS(on) max | [DATA_NEEDED: max R_DS(on) at 10 V V_GS] | β |
| Maximum Power Dissipation (Tc) | 75 W | β |
| Package | PG-TDSON-8-56 (SSO8 HB 5x6 mm) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| Technology | OptiMOS-7 trench-gate | β |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: typical V_GS(th)] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Packing | Tape & Reel | β |
| Part Series | β | OptiMOS 6 |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |