IPB60R165CPATMA1 vs IPD60R380C6ATMA1 Сравнение
Подробное сравнение бок о бок IPB60R165CPATMA1 от Infineon и IPD60R380C6ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ Активен
Сравнение характеристик
| Параметр | IPB60R165CPATMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,78 | $0,41 |
| Technology | CoolMOS CP (superjunction, N-Channel) | CoolMOS C6 Superjunction |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 21 A | — |
| Power Dissipation (PD, Tc=25°C) | 192 W | — |
| On-Resistance RDS(on), max (VGS=10V) | 165 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Operating Temperature Range (TJ) | -55°C to +150°C | — |
| Корпус | PG-TO263-3-2 (D2PAK-2) | PG-TO252-3 (DPAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Compliant (Pb-free lead plating) | Compliant |
| JEDEC Qualification | Qualified per JEDEC for target applications | — |
| dv/dt Ruggedness | Extreme dv/dt rated | — |
| Polarity / Channel | N-Channel | — |
| Continuous Drain Current (ID) at TC=25C | — | 10.6 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | — | 380 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | — | 83 W |
| Operating Junction Temperature (TJ) | — | -55C to +150C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| FET Type | — | N-Channel |
| Уровень MSL | — | [DATA_NEEDED: MSL level] |
| Drain-Tab Connection | — | Exposed pad (electrically connected to drain) |