IPB60R165CPATMA1 vs IPD60R380C6ATMA1 Comparison
Detailed side-by-side comparison of IPB60R165CPATMA1 by Infineon and IPD60R380C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB60R165CPATMA1 - 600V 165mΞ© CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 β Active
Specification Comparison
| Parameter | IPB60R165CPATMA1 | IPD60R380C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $0.41 |
| Technology | CoolMOS CP (superjunction, N-Channel) | CoolMOS C6 Superjunction |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 21 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 192 W | β |
| On-Resistance RDS(on), max (VGS=10V) | 165 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | β |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | β |
| Operating Temperature Range (TJ) | -55Β°C to +150Β°C | β |
| Package | PG-TO263-3-2 (D2PAK-2) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (Pb-free lead plating) | Compliant |
| JEDEC Qualification | Qualified per JEDEC for target applications | β |
| dv/dt Ruggedness | Extreme dv/dt rated | β |
| Polarity / Channel | N-Channel | β |
| Continuous Drain Current (ID) at TC=25C | β | 10.6 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | β | 380 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | β | 83 W |
| Operating Junction Temperature (TJ) | β | -55C to +150C |
| Storage Temperature | β | [DATA_NEEDED: storage temperature] |
| FET Type | β | N-Channel |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Drain-Tab Connection | β | Exposed pad (electrically connected to drain) |