IPC100N04S51R7ATMA1 vs IPC70N04S5L4R2ATMA1 Сравнение
Подробное сравнение бок о бок IPC100N04S51R7ATMA1 от Infineon и IPC70N04S5L4R2ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPC100N04S51R7ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,82 | $0,78 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-5 | — |
| Тип транзистора | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| Рабочая температура перехода | -55 °C to +175 °C | — |
| Корпус | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (Surface Mount) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL1 (260 °C peak reflow) | MSL1 (up to 260°C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | 100% (60 A production test) |
| Статус RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Built-in Body Diode | Yes | — |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 70 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 50 W |
| R_DS(on) Max @ Vgs=10V | — | 4.2 mΩ (typ) |
| Gate Threshold (Vgs(th)) | — | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 4.5 V |
| Operating Temperature (Tj) | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 |
| Configuration | — | Single with Built-in Diode |
| Case Connection | — | DRAIN |