IPC100N04S51R7ATMA1 vs IPC70N04S5L4R2ATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S51R7ATMA1 by Infineon and IPC70N04S5L4R2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveInfineon
IPC70N04S5L4R2ATMA1
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S51R7ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS-5 | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | β |
| Drain-Source Voltage VDS | 40 V | β |
| Continuous Drain Current ID | 100 A (at TC) | β |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation PD | 115 W (at TC) | β |
| Thermal Resistance RthJC | 1.3 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-34 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 Β°C peak reflow) | MSL1 (up to 260Β°C peak reflow) |
| AEC-Q101 Qualified | Yes | β |
| Avalanche Tested | 100% tested | 100% (60 A production test) |
| RoHS Status | Compliant (Green Product) | Compliant (Green Product) |
| Built-in Body Diode | Yes | β |
| FET Type | β | N-Channel |
| Technology | β | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | β | 40 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 70 A |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 50 W |
| R_DS(on) Max @ Vgs=10V | β | 4.2 mΞ© (typ) |
| Gate Threshold (Vgs(th)) | β | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | β | 4.5 V |
| Operating Temperature (Tj) | β | -55Β°C to +175Β°C |
| Automotive Qualification | β | AEC-Q101 |
| Configuration | β | Single with Built-in Diode |
| Case Connection | β | DRAIN |