IPC70N04S5L4R2ATMA1 vs BSZ0901NSIATMA1 Сравнение
Подробное сравнение бок о бок IPC70N04S5L4R2ATMA1 от Infineon и BSZ0901NSIATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 ✓ Активен
Сравнение характеристик
| Параметр | IPC70N04S5L4R2ATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,78 | $0,34 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS trench N-channel MOSFET |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| Корпус | PG-TDSON-8-34 (Surface Mount) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | MSL1 (up to 260°C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% (60 A production test) | — |
| Статус RoHS | Compliant (Green Product) | Compliant |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Число выводов | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Диапазон рабочих температур | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |