IPC70N04S5L4R2ATMA1 vs BSZ0901NSIATMA1 对比

详细并排对比 IPC70N04S5L4R2ATMA1 出自 Infineon 和 BSZ0901NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 量产中

规格对比

参数 IPC70N04S5L4R2ATMA1 BSZ0901NSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.34
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS trench N-channel MOSFET
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
封装 PG-TDSON-8-34 (Surface Mount) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Operating Temperature (Tj) -55°C to +175°C —
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% (60 A production test) —
RoHS 状态 Compliant (Green Product) Compliant
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
引脚数量 — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
工作温度范围 — -55 C to +150 C (typical MOSFET range)
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

数据手册与资源

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