IPD50R380CEAUMA1 vs IPB60R165CPATMA1 Сравнение
Подробное сравнение бок о бок IPD50R380CEAUMA1 от Infineon и IPB60R165CPATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
IPD50R380CEAUMA1 ✓ АктивенInfineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPD50R380CEAUMA1 | IPB60R165CPATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,34 | $1,78 |
| Drain-Source Voltage (V(BR)DSS) | 500 V | — |
| Continuous Drain Current (Id) at Tc=25C | 14.1 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 380 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Total Power Dissipation (Ptot) at Tc=25C | 98 W | — |
| Рабочая температура перехода | -55C to +150C | — |
| Technology | CoolMOS CE (super-junction) | CoolMOS CP (superjunction, N-Channel) |
| Channel Type | N-Channel | — |
| Корпус | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK-2) |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Compliant | Compliant (Pb-free lead plating) |
| AEC-Q101 Automotive | Not qualified (CE variant; use CE-A for automotive) | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 21 A |
| Power Dissipation (PD, Tc=25°C) | — | 192 W |
| On-Resistance RDS(on), max (VGS=10V) | — | 165 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Total Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Operating Temperature Range (TJ) | — | -55°C to +150°C |
| JEDEC Qualification | — | Qualified per JEDEC for target applications |
| dv/dt Ruggedness | — | Extreme dv/dt rated |
| Polarity / Channel | — | N-Channel |