IPD50R380CEAUMA1 vs IPB60R165CPATMA1 对比

详细并排对比 IPD50R380CEAUMA1 出自 Infineon 和 IPB60R165CPATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IPD50R380CEAUMA1 IPB60R165CPATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.34 $1.78
Drain-Source Voltage (V(BR)DSS) 500 V —
Continuous Drain Current (Id) at Tc=25C 14.1 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm] —
On-State Resistance (RDS(on)) max at VGS=10V 380 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Total Power Dissipation (Ptot) at Tc=25C 98 W —
工作结温 -55C to +150C —
Technology CoolMOS CE (super-junction) CoolMOS CP (superjunction, N-Channel)
Channel Type N-Channel —
封装 PG-TO252-3 (DPAK) PG-TO263-3-2 (D2PAK-2)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant (Pb-free lead plating)
AEC-Q101 Automotive Not qualified (CE variant; use CE-A for automotive) —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 21 A
Power Dissipation (PD, Tc=25°C) — 192 W
On-Resistance RDS(on), max (VGS=10V) — 165 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Total Gate Charge (Qg, typ) — [DATA_NEEDED: Qg typical value]
Operating Temperature Range (TJ) — -55°C to +150°C
JEDEC Qualification — Qualified per JEDEC for target applications
dv/dt Ruggedness — Extreme dv/dt rated
Polarity / Channel — N-Channel

数据手册与资源

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