IPL60R065P7AUMA1 vs BSC011N03LSATMA1 Сравнение
Подробное сравнение бок о бок IPL60R065P7AUMA1 от Infineon и BSC011N03LSATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IPL60R065P7AUMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,18 | $0,54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology Family | CoolMOS™ P7 (superjunction) | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | 41 A | — |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΩ (max) | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) | 201 W | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF | — |
| Rise Time (t<sub>r</sub>) | 7 ns | — |
| Fall Time (t<sub>f</sub>) | 4 ns | — |
| Диапазон рабочих температур | -55 °C to +150 °C (T<sub>j</sub>) | -55C to +150C |
| Корпус | PG-VSON-4 (surface mount with exposed pad) | PG-TDSON-8-1 (SuperSO8) |
| Количество выводов | 4 | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Polarity | Single N-channel | N-Channel |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) | — |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) | 0.053 Ω | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 (per JEDEC J-STD-020) | 1 |
| Без галогенов | Yes | — |
| Product Series | — | OptiMOS 30V |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 37 A |
| Pulsed Drain Current (IDM) | — | 100 A (TC) |
| On-State Resistance (RDS(on)) at VGS=10V | — | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.2 V (typ 1.6 V) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | — | 96 W |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |