IPL60R065P7AUMA1 vs BSC011N03LSATMA1 Comparison
Detailed side-by-side comparison of IPL60R065P7AUMA1 by Infineon and BSC011N03LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R065P7AUMA1
IPL60R065P7AUMA1 - 600V 65mΞ© CoolMOS P7 MOSFET | Infineon
IPL60R065P7AUMA1 β ActiveInfineon
BSC011N03LSATMA1
BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon
BSC011N03LSATMA1 β ActiveSpecification Comparison
| Parameter | IPL60R065P7AUMA1 | BSC011N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $0.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology Family | CoolMOSβ’ P7 (superjunction) | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 Β°C) | 41 A | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 65 mΞ© (max) | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 Β°C) | 201 W | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 3.5 V | β |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | 2895 pF | β |
| Rise Time (t<sub>r</sub>) | 7 ns | β |
| Fall Time (t<sub>f</sub>) | 4 ns | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T<sub>j</sub>) | -55C to +150C |
| Package | PG-VSON-4 (surface mount with exposed pad) | PG-TDSON-8-1 (SuperSO8) |
| Number of Pins | 4 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| Polarity | Single N-channel | N-Channel |
| Drain to Source Voltage | 650 V (rating per AiEMA spec) | β |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 Β°C) | 0.053 Ξ© | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Halogen-Free | Yes | β |
| Product Series | β | OptiMOS 30V |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TA=25C | β | 37 A |
| Pulsed Drain Current (IDM) | β | 100 A (TC) |
| On-State Resistance (RDS(on)) at VGS=10V | β | 1.1 mOhm (typ) |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.2 V (typ 1.6 V) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation (PD) at TC=25C | β | 96 W |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |