IQE020N04LM6CGATMA1 vs ISC016N08NM8ATMA1 Сравнение
Подробное сравнение бок о бок IQE020N04LM6CGATMA1 от Infineon и ISC016N08NM8ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IQE020N04LM6CGATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,75 | $1,02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| Корпус | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55°C to +150°C | -55 C to +150 C (junction) |
| Technology | OptiMOS 6, TrenchFET-class | Trench-gate OptiMOS 8 (silicon) |
| Configuration | Single N-Channel, source-down | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |