IQE020N04LM6CGATMA1 vs ISC016N08NM8ATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGATMA1 by Infineon and ISC016N08NM8ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β Active
Specification Comparison
| Parameter | IQE020N04LM6CGATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 25 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 166 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C | -55 C to +150 C (junction) |
| Technology | OptiMOS 6, TrenchFET-class | Trench-gate OptiMOS 8 (silicon) |
| Configuration | Single N-Channel, source-down | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Product Series | β | OptiMOS 8 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 80 V |
| Gate-Source Voltage (VGS max) | β | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | β | 268 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | β | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: total gate charge] |
| Lead-Free / Halogen-Free | β | Lead-free (per Infineon product page) |