IQE036N08NM6ATMA1 vs ISC015N06NM5ATMA1 Сравнение
Подробное сравнение бок о бок IQE036N08NM6ATMA1 от Infineon и ISC015N06NM5ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IQE036N08NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,92 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID) at Ta | 16.7 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| On-Resistance RDS(on) typical | 3.6 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 125 W | — |
| Корпус | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55°C to +150°C (junction, per datasheet) | -55 C to +175 C |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | MSL1 (per JEDEC J-STD-020) | — |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |