IQFH55N04NM6ATMA1 vs IQEH50NE2LM7ZCGATMA1 Сравнение
Подробное сравнение бок о бок IQFH55N04NM6ATMA1 от Infineon и IQEH50NE2LM7ZCGATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQFH55N04NM6ATMA1 - 40V 451A 0.55mΩ OptiMOS 6 MOSFET | Infineon
IQFH55N04NM6ATMA1 ✓ АктивенInfineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQFH55N04NM6ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,38 | $1,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) @ TA=25°C | 53 A | — |
| Pulsed Drain Current @ TC=25°C | 451 A | — |
| Static R_DS(on) (typ) | 0.55 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 214 W | — |
| Корпус | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) | PG-TTFN-9-3 |
| Тип монтажа | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Рабочая температура перехода | -55°C to +175°C | — |
| Technology | Trench MOSFET (OptiMOS 6 generation) | OptiMOS 7 (Trench-Gate) |
| Статус RoHS | Compliant | Compliant |
| AEC-Q100 | [DATA_NEEDED: automotive qualification status] | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Maximum Junction Temperature | — | +175 degrees C |
| Диапазон рабочих температур | — | -55 degrees C to +175 degrees C |
| Qualification | — | Industrial grade per Infineon datasheet |