IRF3710STRLPBF vs IRFB4310PBF Сравнение
Подробное сравнение бок о бок IRF3710STRLPBF от Infineon и IRFB4310PBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF3710STRLPBF | IRFB4310PBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,23 | $1,95 |
| FET Type | N-Channel | — |
| Technology | HEXFET / IR MOSFET (planar) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25 C) | 57 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max | 23 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Total Gate Charge (Qg) | 86.7 nC | 170 nC |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc=25 C) | 200 W | — |
| Диапазон рабочих температур | -55 C to +175 C | -55C to +175C (junction) |
| Корпус | D2PAK (TO-263), surface mount | TO-220AB (through-hole) |
| Тип монтажа | Surface Mount | Through Hole |
| Статус RoHS | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | Yes (Pb-free PBF suffix) |
| Tape & Reel Orientation | TRL (left) | — |
| Тип транзистора | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 130 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Maximum Power Dissition (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 7 mOhm |
| On-Resistance RDS(on) typical at VGS=10V | — | 5.6 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Rated | — | Yes |