IRF4905PBF vs IRLU024NPBF Сравнение
Подробное сравнение бок о бок IRF4905PBF от Infineon и IRLU024NPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF4905PBF | IRLU024NPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,95 | $0,61 |
| FET Type | P-Channel | N-Channel, Logic-Level |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET (5th generation) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -74 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at TC | 200 W | — |
| On-Resistance RDS(on) max at VGS=-10V | 20 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | 120 nC | 10 nC (typical, per listing) |
| Диапазон рабочих температур | -55 °C to +175 °C (junction) | — |
| Корпус | TO-220AB (through-hole) | IPAK (TO-251AA), Through Hole |
| Pin Configuration | Gate - Drain - Source (left to right) | — |
| Тип монтажа | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | Yes (PBF suffix indicates lead-free plating) |
| Уровень MSL | 1 (not moisture-sensitive for TO-220) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLU024NPBF |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| On-Resistance RDS(on) max at VGS=10V | — | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 110 C/W (50 C/W PCB-mounted) |
| Рабочая температура перехода | — | -55C to +175C |
| Qualification | — | JEDEC standard |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |