IRF4905PBF vs IRLU024NPBF 对比

详细并排对比 IRF4905PBF 出自 Infineon 和 IRLU024NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF4905PBF IRLU024NPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $0.61
FET Type P-Channel N-Channel, Logic-Level
Technology HEXFET (IR MOSFET) HEXFET Power MOSFET (5th generation)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC -74 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Power Dissipation (PD) at TC 200 W —
On-Resistance RDS(on) max at VGS=-10V 20 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) 120 nC 10 nC (typical, per listing)
工作温度范围 -55 °C to +175 °C (junction) —
封装 TO-220AB (through-hole) IPAK (TO-251AA), Through Hole
Pin Configuration Gate - Drain - Source (left to right) —
安装类型 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) Yes (PBF suffix indicates lead-free plating)
MSL 等级 1 (not moisture-sensitive for TO-220) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLU024NPBF
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 17 A
On-Resistance RDS(on) max at VGS=10V — 65 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Power Dissipation (PD) at TC=25C — 45 W
Thermal Resistance Junction-to-Case (RthJC) — 3.3 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 110 C/W (50 C/W PCB-mounted)
工作结温 — -55C to +175C
Qualification — JEDEC standard
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)

数据手册与资源

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