IRF5305STRLPBF vs IRLZ34NSTRLPBF Сравнение
Подробное сравнение бок о бок IRF5305STRLPBF от Infineon и IRLZ34NSTRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF5305STRLPBF | IRLZ34NSTRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,92 | $0,58 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | — |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C] | — |
| RDS(on) max at VGS=-10V | 60 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) | 16.7 nC |
| Maximum Power Dissition at Tc | 110 W | — |
| Maximum Power Dissipation at TA | 3.8 W | — |
| Корпус | TO-263 / D2PAK (surface mount) | D2PAK (TO-263), surface mount |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | [DATA_NEEDED: Tj max / operating range] | [DATA_NEEDED: operating temperature range] |
| Technology | HEXFET (fifth generation), IR MOSFET | — |
| Packaging | Tape & Reel (TR), 800 pcs per reel | — |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 30 A |
| Pulsed Drain Current (IDM) | — | 110 A |
| RDS(on) at VGS=5V | — | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (5 V drive compatible) |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 68 W |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single with built-in diode |
| Switching Frequency Optimization | — | Below 100 kHz |
| Cell Structure | — | HEXFET planar (5th generation) |
| Qualification | — | JEDEC standard |
| Статус RoHS | — | Compliant (Pb-free) |