IRF5305STRLPBF vs IRLZ34NSTRLPBF Comparison
Detailed side-by-side comparison of IRF5305STRLPBF by Infineon and IRLZ34NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF5305STRLPBF | IRLZ34NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.58 |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -31 A | β |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C] | β |
| RDS(on) max at VGS=-10V | 60 mOhm | β |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | β |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) | 16.7 nC |
| Maximum Power Dissition at Tc | 110 W | β |
| Maximum Power Dissipation at TA | 3.8 W | β |
| Package | TO-263 / D2PAK (surface mount) | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj max / operating range] | [DATA_NEEDED: operating temperature range] |
| Technology | HEXFET (fifth generation), IR MOSFET | β |
| Packaging | Tape & Reel (TR), 800 pcs per reel | β |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC | β | 30 A |
| Pulsed Drain Current (IDM) | β | 110 A |
| RDS(on) at VGS=5V | β | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (5 V drive compatible) |
| Power Dissipation (Ta) | β | 3.8 W |
| Power Dissipation (Tc) | β | 68 W |
| Built-in Body Diode | β | Yes |
| Configuration | β | Single with built-in diode |
| Switching Frequency Optimization | β | Below 100 kHz |
| Cell Structure | β | HEXFET planar (5th generation) |
| Qualification | β | JEDEC standard |
| RoHS Status | β | Compliant (Pb-free) |