IRFL014NTRPBF vs IRFR120NTRLPBF Сравнение
Подробное сравнение бок о бок IRFL014NTRPBF от Infineon и IRFR120NTRLPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF ✓ Активен
Сравнение характеристик
| Параметр | IRFL014NTRPBF | IRFR120NTRLPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,30 | $0,62 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at 25 C | 1.9 A | — |
| Continuous Drain Current (ID) at 70 C | [DATA_NEEDED: ID at 70 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=10V | 160 milliohm | — |
| Gate Charge (Qg) typical | 7 nC | — |
| Threshold Voltage VGS(th) typical | [DATA_NEEDED: VGS(th)] | — |
| Power Dissipation (PD) at 25 C | 1.0 W (free air), up to 2.1 W with proper PCB copper | — |
| Диапазон рабочих температур | -55 C to +150 C (junction) | — |
| Корпус | SOT-223 (TO-261-4), 4-pin (3 + tab) | PG-TO252-3 (DPAK) |
| Тип монтажа | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Yes (dynamic dv/dt rated) | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Уровень MSL | Level 1 (per JEDEC J-STD-020) | — |
| Technology | HEXFET (planar N-channel, fifth generation) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Total Gate Charge (Qg) | — | 16.7 nC |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| Диапазон рабочей температуры перехода | — | -55C to +175C |
| Avalanche Energy Rated | — | Yes (fully avalanche rated) |
| Статус RoHS | — | Compliant |
| Lead-Free Finish | — | Yes (Pb-free) |