IRFL014NTRPBF vs IRFR120NTRLPBF Comparison
Detailed side-by-side comparison of IRFL014NTRPBF by Infineon and IRFR120NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF β Active
Specification Comparison
| Parameter | IRFL014NTRPBF | IRFR120NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.30 | $0.62 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at 25 C | 1.9 A | β |
| Continuous Drain Current (ID) at 70 C | [DATA_NEEDED: ID at 70 C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 160 milliohm | β |
| Gate Charge (Qg) typical | 7 nC | β |
| Threshold Voltage VGS(th) typical | [DATA_NEEDED: VGS(th)] | β |
| Power Dissipation (PD) at 25 C | 1.0 W (free air), up to 2.1 W with proper PCB copper | β |
| Operating Temperature Range | -55 C to +150 C (junction) | β |
| Package | SOT-223 (TO-261-4), 4-pin (3 + tab) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| dv/dt Rating | Yes (dynamic dv/dt rated) | β |
| Lead-Free / RoHS | Yes / Compliant | β |
| MSL Level | Level 1 (per JEDEC J-STD-020) | β |
| Technology | HEXFET (planar N-channel, fifth generation) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 9.4 A |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | β | 210 mΞ© |
| Total Gate Charge (Qg) | β | 16.7 nC |
| Power Dissipation (PD) at TC=25C | β | 48 W |
| Operating Junction Temperature Range | β | -55C to +175C |
| Avalanche Energy Rated | β | Yes (fully avalanche rated) |
| RoHS Status | β | Compliant |
| Lead-Free Finish | β | Yes (Pb-free) |