IRFR5305TRPBF vs IRF8736TRPBF Сравнение
Подробное сравнение бок о бок IRFR5305TRPBF от Infineon и IRF8736TRPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFR5305TRPBF | IRF8736TRPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,32 | $0,27 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) Max | -55 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | — |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Диапазон рабочих температур | -55 C to +175 C | -55C to +150C (junction) |
| Корпус | TO-252AA (DPAK) | SO-8 (8-SO, MS-012AA) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | StrongIRFET / HEXFET |
| Уровень MSL | 1 | 1 (per JEDEC J-STD-020) |
| Статус RoHS | Compliant (Pb-free PBF suffix) | — |
| Lead-Free Finish | Yes (PBF suffix) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Avalanche Rated | — | Yes (fully characterized avalanche voltage) |
| Configuration | — | Single |
| Packaging | — | Tape & Reel (TRPBF suffix) |