IRFR5305TRPBF vs IRF8736TRPBF 对比

详细并排对比 IRFR5305TRPBF 出自 Infineon 和 IRF8736TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 量产中

规格对比

参数 IRFR5305TRPBF IRF8736TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.32 $0.27
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V 30 V
Continuous Drain Current (ID) at TC=25C 31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
工作温度范围 -55 C to +175 C -55C to +150C (junction)
封装 TO-252AA (DPAK) SO-8 (8-SO, MS-012AA)
安装类型 Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) StrongIRFET / HEXFET
MSL 等级 1 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant (Pb-free PBF suffix) —
Lead-Free Finish Yes (PBF suffix) —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 18 A
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated — Yes (fully characterized avalanche voltage)
Configuration — Single
Packaging — Tape & Reel (TRPBF suffix)

数据手册与资源

浏览全部产品 创建 BOM 获取报价